PSMN1R0-40SSH Spec and Replacement
Type Designator: PSMN1R0-40SSH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 375 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 325 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 1578 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.001 Ohm
Package: SOT1235
PSMN1R0-40SSH Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PSMN1R0-40SSH Specs
psmn1r0-40ssh.pdf
PSMN1R0-40SSH N-channel 40 V, 1 m , 325 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology 1 May 2019 Product data sheet 1. General description 325 Amp continuous current, standard level gate drive, N-channel enhancement mode MOSFET in LFPAK88 package. NextPowerS3 family using Nexperia s unique SchottkyPlus technology delivers high efficiency and low ... See More ⇒
psmn1r0-40yld.pdf
PSMN1R0-40YLD N-channel 40 V 1.1 m logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 25 August 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in 150 C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching appli... See More ⇒
psmn1r0-40uld.pdf
PSMN1R0-40ULD N-channel 40 V, 1.1 m , 280 A logic level MOSFET in SOT1023A enhanced package for UL2595, using NextPower- S3 Schottky-Plus technology 23 May 2018 Product data sheet 1. General description SOT1023A with improved creepage and clearance to meet UL2595 requirements 280 Amp, logic level gate drive N-channel enhancement mode MOSFET in 150 C LFPAK56 package using advanced Tre... See More ⇒
psmn1r0-40ysh.pdf
PSMN1R0-40YSH N-channel 40 V, 1 m , 290 A standard level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology 25 April 2019 Product data sheet 1. General description 290 Amp, standard level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56E package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance... See More ⇒
Detailed specifications: PSMN018-100ESF , PSMN018-100PSF , PSMN019-100YL , PSMN021-100YL , PSMN025-80YL , PSMN0R9-25YLD , PSMN0R9-30ULD , PSMN1R0-25YLD , 8N60 , PSMN1R0-40ULD , PSMN1R0-40YSH , PSMN1R2-25YLD , PSMN1R5-25MLH , PSMN1R5-40YSD , PSMN1R6-30MLH , PSMN1R7-25YLD , PSMN1R7-40YLD .
History: AP4N3R6P
Keywords - PSMN1R0-40SSH MOSFET specs
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