PSMN1R2-25YLD Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN1R2-25YLD 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 172 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 30.3 nS
Cossⓘ - Capacitancia de salida: 1734 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0012 Ohm
Encapsulados: SOT669
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PSMN1R2-25YLD datasheet
psmn1r2-25yld.pdf
PSMN1R2-25YLD N-channel 25 V, 1.2 m , 230 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology 19 April 2016 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia s unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated wi
psmn1r2-25ylc.pdf
PSMN1R2-25YLC N-channel 25 V 1.3 m logic level MOSFET in LFPAK using NextPower technology Rev. 1 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits
psmn1r2-25yl.pdf
PSMN1R2-25YL N-channel 25 V 1.2 m logic level MOSFET in LFPAK Rev. 01 25 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS pro
psmn1r2-25yl.pdf
PSMN1R2-25YL N-channel 25 V 1.2 m logic level MOSFET in LFPAK Rev. 01 25 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS pro
Otros transistores... PSMN021-100YL, PSMN025-80YL, PSMN0R9-25YLD, PSMN0R9-30ULD, PSMN1R0-25YLD, PSMN1R0-40SSH, PSMN1R0-40ULD, PSMN1R0-40YSH, AO3400A, PSMN1R5-25MLH, PSMN1R5-40YSD, PSMN1R6-30MLH, PSMN1R7-25YLD, PSMN1R7-40YLD, PSMN1R8-30MLH, PSMN1R9-40YSD, PSMN2R0-25MLD
History: SI5461EDC | IXTU4N60P | PB210BTF | PDD3908 | DTJ018N04N | AP3R303GMT | IRF3707
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