PSMN1R2-25YLD Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: PSMN1R2-25YLD
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 172 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 30.3 ns
Cossⓘ - Выходная емкость: 1734 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0012 Ohm
Тип корпуса: SOT669
Аналог (замена) для PSMN1R2-25YLD
PSMN1R2-25YLD Datasheet (PDF)
psmn1r2-25yld.pdf

PSMN1R2-25YLDN-channel 25 V, 1.2 m, 230 A logic level MOSFET inLFPAK56 using NextPowerS3 Technology19 April 2016 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising Nexperias unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated wi
psmn1r2-25ylc.pdf

PSMN1R2-25YLCN-channel 25 V 1.3 m logic level MOSFET in LFPAK using NextPower technologyRev. 1 2 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits
psmn1r2-25yl.pdf

PSMN1R2-25YLN-channel 25 V 1.2 m logic level MOSFET in LFPAKRev. 01 25 June 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in LFPAK package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMOS pro
psmn1r2-25yl.pdf

PSMN1R2-25YLN-channel 25 V 1.2 m logic level MOSFET in LFPAKRev. 01 25 June 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in LFPAK package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMOS pro
Другие MOSFET... PSMN021-100YL , PSMN025-80YL , PSMN0R9-25YLD , PSMN0R9-30ULD , PSMN1R0-25YLD , PSMN1R0-40SSH , PSMN1R0-40ULD , PSMN1R0-40YSH , RU6888R , PSMN1R5-25MLH , PSMN1R5-40YSD , PSMN1R6-30MLH , PSMN1R7-25YLD , PSMN1R7-40YLD , PSMN1R8-30MLH , PSMN1R9-40YSD , PSMN2R0-25MLD .
History: BUK7J1R4-40H | BLF871 | 2SK3485 | APM4461 | BUK7635-55A | APM7320K | UF630G-TM3-T
History: BUK7J1R4-40H | BLF871 | 2SK3485 | APM4461 | BUK7635-55A | APM7320K | UF630G-TM3-T



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