PSMN1R9-40YSD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: PSMN1R9-40YSD
   Código: 1D9S40Y
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 194 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 200 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.6 V
   Qgⓘ - Carga de la puerta: 57 nC
   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 1115 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0019 Ohm
   Paquete / Cubierta: SOT669

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PSMN1R9-40YSD Datasheet (PDF)

..1. Size:303K nxp
psmn1r9-40ysd.pdf

PSMN1R9-40YSDN-channel 40 V, 1.9 m, 200 A standard level MOSFET inLFPAK56 using NextPower-S3 Schottky-Plus technology27 August 2019 Product data sheet1. General description200 A, standard level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56package using advanced TrenchMOS Superjunction technology. This product has been designedand qualified for high performance

4.1. Size:255K nxp
psmn1r9-40pl.pdf

PSMN1R9-40PLN-channel 40 V, 1.7 m logic level MOSFET in SOT781 February 2013 Product data sheet1. General descriptionLogic level N-channel MOSFET in SOT78 using TrenchMOS technology. Product designand manufacture has been optimized for use in battery operated power tools.2. Features and benefits High efficiency due to low switching & conduction losses Robust constructio

4.2. Size:261K inchange semiconductor
psmn1r9-40pl.pdf

isc N-Channel MOSFET Transistor PSMN1R9-40PLFEATURESDrain Current I = 150A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 1.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

6.1. Size:353K philips
psmn1r9-25ylc.pdf

PSMN1R9-25YLCN-channel 25 V 2.05 m logic level MOSFET in LFPAK using NextPower technologyRev. 1 2 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits

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