All MOSFET. PSMN1R9-40YSD Datasheet

 

PSMN1R9-40YSD MOSFET. Datasheet pdf. Equivalent


   Type Designator: PSMN1R9-40YSD
   Marking Code: 1D9S40Y
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 194 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.6 V
   |Id|ⓘ - Maximum Drain Current: 200 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 57 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 1115 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0019 Ohm
   Package: SOT669

 PSMN1R9-40YSD Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PSMN1R9-40YSD Datasheet (PDF)

 ..1. Size:303K  nxp
 psmn1r9-40ysd.pdf

PSMN1R9-40YSD PSMN1R9-40YSD

PSMN1R9-40YSDN-channel 40 V, 1.9 m, 200 A standard level MOSFET inLFPAK56 using NextPower-S3 Schottky-Plus technology27 August 2019 Product data sheet1. General description200 A, standard level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56package using advanced TrenchMOS Superjunction technology. This product has been designedand qualified for high performance

 4.1. Size:255K  nxp
 psmn1r9-40pl.pdf

PSMN1R9-40YSD PSMN1R9-40YSD

PSMN1R9-40PLN-channel 40 V, 1.7 m logic level MOSFET in SOT781 February 2013 Product data sheet1. General descriptionLogic level N-channel MOSFET in SOT78 using TrenchMOS technology. Product designand manufacture has been optimized for use in battery operated power tools.2. Features and benefits High efficiency due to low switching & conduction losses Robust constructio

 4.2. Size:261K  inchange semiconductor
 psmn1r9-40pl.pdf

PSMN1R9-40YSD PSMN1R9-40YSD

isc N-Channel MOSFET Transistor PSMN1R9-40PLFEATURESDrain Current I = 150A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 1.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

 6.1. Size:353K  philips
 psmn1r9-25ylc.pdf

PSMN1R9-40YSD PSMN1R9-40YSD

PSMN1R9-25YLCN-channel 25 V 2.05 m logic level MOSFET in LFPAK using NextPower technologyRev. 1 2 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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