PSMN3R3-40MSH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN3R3-40MSH
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 101 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 118 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6.4 nS
Cossⓘ - Capacitancia de salida: 637 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0033 Ohm
Paquete / Cubierta: SOT1210
- Selección de transistores por parámetros
PSMN3R3-40MSH Datasheet (PDF)
psmn3r3-40msh.pdf

PSMN3R3-40MSHN-channel 40 V, 3.3 m, standard level MOSFET in LFPAK33using NextPower-S3 technology11 November 2019 Product data sheet1. General description118 A, standard level N-channel enhancement mode MOSFET in 175 C LFPAK33 package usingadvanced TrenchMOS Superjunction technology. This product has been designed and qualified forhigh efficiency applications at high switching
psmn3r3-40mlh.pdf

PSMN3R3-40MLHN-channel 40 V, 3.3 m, logic level MOSFET in LFPAK33using NextPower-S3 technology11 November 2019 Product data sheet1. General description118 A, logic level N-channel enhancement mode MOSFET in 175 C LFPAK33 package usingadvanced TrenchMOS Superjunction technology. This product has been designed and qualified forhigh efficiency applications at high switching frequ
psmn3r3-40ys.pdf

PSMN3R3-40YSN-channel LFPAK 40 V 3.3 m standard level MOSFETRev. 04 25 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchM
psmn3r3-40ys.pdf

PSMN3R3-40YSN-channel LFPAK 40 V 3.3 m standard level MOSFETRev. 04 25 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchM
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: NVMTS0D6N04C | IRFN150SMD | 2002A | P8008BDA | SI4463BDY-T1 | 2N6904 | OSG65R600FSF-NB
History: NVMTS0D6N04C | IRFN150SMD | 2002A | P8008BDA | SI4463BDY-T1 | 2N6904 | OSG65R600FSF-NB



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