PSMN3R3-40MSH - Даташиты. Аналоги. Основные параметры
Наименование производителя: PSMN3R3-40MSH
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 101 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 118 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 6.4 ns
Cossⓘ - Выходная емкость: 637 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0033 Ohm
Тип корпуса: SOT1210
Аналог (замена) для PSMN3R3-40MSH
PSMN3R3-40MSH Datasheet (PDF)
psmn3r3-40msh.pdf
PSMN3R3-40MSH N-channel 40 V, 3.3 m , standard level MOSFET in LFPAK33 using NextPower-S3 technology 11 November 2019 Product data sheet 1. General description 118 A, standard level N-channel enhancement mode MOSFET in 175 C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching
psmn3r3-40mlh.pdf
PSMN3R3-40MLH N-channel 40 V, 3.3 m , logic level MOSFET in LFPAK33 using NextPower-S3 technology 11 November 2019 Product data sheet 1. General description 118 A, logic level N-channel enhancement mode MOSFET in 175 C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching frequ
psmn3r3-40ys.pdf
PSMN3R3-40YS N-channel LFPAK 40 V 3.3 m standard level MOSFET Rev. 04 25 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchM
psmn3r3-40ys.pdf
PSMN3R3-40YS N-channel LFPAK 40 V 3.3 m standard level MOSFET Rev. 04 25 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchM
Другие MOSFET... PSMN2R0-25YLD , PSMN2R0-40YLD , PSMN2R0-60PSR , PSMN2R2-40YSD , PSMN2R5-40YLD , PSMN2R8-40YSD , PSMN3R2-40YLD , PSMN3R3-40MLH , AO4407A , PSMN3R5-25MLD , PSMN3R5-40YSD , PSMN3R9-100YSF , PSMN4R1-60YL , PSMN5R2-60YL , PSMN5R3-25MLD , PSMN5R4-25YLD , PSMN5R6-60YL .
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