PSMN3R3-40MSH Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: PSMN3R3-40MSH
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 101 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 118 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 6.4 ns
Cossⓘ - Выходная емкость: 637 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0033 Ohm
Тип корпуса: SOT1210
Аналог (замена) для PSMN3R3-40MSH
PSMN3R3-40MSH Datasheet (PDF)
psmn3r3-40msh.pdf

PSMN3R3-40MSHN-channel 40 V, 3.3 m, standard level MOSFET in LFPAK33using NextPower-S3 technology11 November 2019 Product data sheet1. General description118 A, standard level N-channel enhancement mode MOSFET in 175 C LFPAK33 package usingadvanced TrenchMOS Superjunction technology. This product has been designed and qualified forhigh efficiency applications at high switching
psmn3r3-40mlh.pdf

PSMN3R3-40MLHN-channel 40 V, 3.3 m, logic level MOSFET in LFPAK33using NextPower-S3 technology11 November 2019 Product data sheet1. General description118 A, logic level N-channel enhancement mode MOSFET in 175 C LFPAK33 package usingadvanced TrenchMOS Superjunction technology. This product has been designed and qualified forhigh efficiency applications at high switching frequ
psmn3r3-40ys.pdf

PSMN3R3-40YSN-channel LFPAK 40 V 3.3 m standard level MOSFETRev. 04 25 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchM
psmn3r3-40ys.pdf

PSMN3R3-40YSN-channel LFPAK 40 V 3.3 m standard level MOSFETRev. 04 25 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchM
Другие MOSFET... PSMN2R0-25YLD , PSMN2R0-40YLD , PSMN2R0-60PSR , PSMN2R2-40YSD , PSMN2R5-40YLD , PSMN2R8-40YSD , PSMN3R2-40YLD , PSMN3R3-40MLH , AO3407 , PSMN3R5-25MLD , PSMN3R5-40YSD , PSMN3R9-100YSF , PSMN4R1-60YL , PSMN5R2-60YL , PSMN5R3-25MLD , PSMN5R4-25YLD , PSMN5R6-60YL .
History: 10N65KL-TN3-R | 2SK4059MFV | BLS65R165-P | AONR20485 | 12N80G-T47-T | IRF140SMD
History: 10N65KL-TN3-R | 2SK4059MFV | BLS65R165-P | AONR20485 | 12N80G-T47-T | IRF140SMD



Список транзисторов
Обновления
MOSFET: JMSH0805PK | JMSH0805PG | JMSH0805PE | JMSH0805PC | JMSH0804NK | JMSH0804NG | JMSH0804NE | JMSH0804NC | JMSH0803PC | JMSH0803NGS | JMSH0803MTL | JMSH0803MG | JMSH0803ME | JMSH0803MC | JMSH0803AGS | JBE084M
Popular searches
irfz44n equivalent | 2n2923 | 2n2102 | mj15003g | oc75 transistor | irfp260m | 2sc1213 | a1491 transistor