PSMN3R9-100YSF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PSMN3R9-100YSF  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 245 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 18 nS

Cossⓘ - Capacitancia de salida: 1313 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0043 Ohm

Encapsulados: SOT1023

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PSMN3R9-100YSF datasheet

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 psmn3r9-100ysf.pdf pdf_icon

PSMN3R9-100YSF

PSMN3R9-100YSF NextPower 100 V, 4.3 m N-channel MOSFET in LFPAK56 package 17 February 2020 Preliminary data sheet 1. General description NextPower 100 V, standard level gate drive MOSFET. Qualified to 150 C and recommended for industrial and consumer applications. 2. Features and benefits Low Qrr for higher efficiency and lower spiking 120 A ID (max) demonstrated contin

 6.1. Size:249K  nxp
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PSMN3R9-100YSF

PSMN3R9-60PS N-channel 60 V, 3.9 m standard level MOSFET in SOT78 1 February 2013 Product data sheet 1. General description Standard level N-channel MOSFET in SOT78 using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power tools. 2. Features and benefits High efficiency due to low switching & conduction losses Robust const

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PSMN3R9-100YSF

PSMN3R9-25MLC N-channel 25 V 4.15 m logic level MOSFET in LFPAK33 using NextPower Technology Rev. 4 15 June 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and ben

 6.3. Size:232K  nxp
 psmn3r9-60xs.pdf pdf_icon

PSMN3R9-100YSF

PSMN3R9-60XS N-channel 60 V, 4.0 m standard level MOSFET in TO220F (SOT186A) 12 September 2013 Product data sheet 1. General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency due

MOSTRAR MÁS

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