All MOSFET. PSMN3R9-100YSF Datasheet

 

PSMN3R9-100YSF Datasheet and Replacement


   Type Designator: PSMN3R9-100YSF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 245 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 1313 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm
   Package: SOT1023
 

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PSMN3R9-100YSF Datasheet (PDF)

 ..1. Size:294K  nxp
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PSMN3R9-100YSF

PSMN3R9-100YSFNextPower 100 V, 4.3 m N-channel MOSFET in LFPAK56package17 February 2020 Preliminary data sheet1. General descriptionNextPower 100 V, standard level gate drive MOSFET. Qualified to 150 C and recommended forindustrial and consumer applications.2. Features and benefits Low Qrr for higher efficiency and lower spiking 120 A ID (max) demonstrated contin

 6.1. Size:249K  nxp
psmn3r9-60ps.pdf pdf_icon

PSMN3R9-100YSF

PSMN3R9-60PSN-channel 60 V, 3.9 m standard level MOSFET in SOT781 February 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in SOT78 using TrenchMOS technology. Productdesign and manufacture has been optimized for use in battery operated power tools.2. Features and benefits High efficiency due to low switching & conduction losses Robust const

 6.2. Size:365K  nxp
psmn3r9-25mlc.pdf pdf_icon

PSMN3R9-100YSF

PSMN3R9-25MLCN-channel 25 V 4.15 m logic level MOSFET in LFPAK33 using NextPower TechnologyRev. 4 15 June 2012 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and ben

 6.3. Size:232K  nxp
psmn3r9-60xs.pdf pdf_icon

PSMN3R9-100YSF

PSMN3R9-60XSN-channel 60 V, 4.0 m standard level MOSFET in TO220F(SOT186A)12 September 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in TO220F (SOT186A) package qualified to175 C. This product is designed and qualified for use in a wide range of industrial,communications and domestic equipment.2. Features and benefits High efficiency due

Datasheet: PSMN2R2-40YSD , PSMN2R5-40YLD , PSMN2R8-40YSD , PSMN3R2-40YLD , PSMN3R3-40MLH , PSMN3R3-40MSH , PSMN3R5-25MLD , PSMN3R5-40YSD , IRFP064N , PSMN4R1-60YL , PSMN5R2-60YL , PSMN5R3-25MLD , PSMN5R4-25YLD , PSMN5R6-60YL , PSMN6R0-25YLD , PSMN6R4-30MLD , PSMN6R5-30MLD .

Keywords - PSMN3R9-100YSF MOSFET datasheet

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