PSMN6R4-30MLD Todos los transistores

PSMN6R4-30MLD N-channel 30 V, 6.4 m logic level MOSFET in LFPAK33 using NextPowerS3 Technology 21 January 2019 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in an LFPAK33 package. The NextPowerS3 portfolio, utilising Nexperia s unique SchottkyPlus technology, delivers high efficiency and the low spiking performance usually as

PSMN6R0-30YL N-channel 30 V 6 m logic level MOSFET in LFPAK Rev. 04 10 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefit

PSMN6R5-80PS N-channel 80 V 6.9 m standard level MOSFET in TO220 Rev. 02 1 November 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficien

PSMN6R0-30YLD N-channel 30 V, 6.0 m logic level MOSFET in LFPAK56 using NextPowerS3 Technology 10 February 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP s unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFET

PSMN6R5-80BS N-channel 80V 6.9m standard level MOSFET in D2PAK Rev. 2 2 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency

PSMN6R1-30YLD N-channel 30 V, 6.1 m logic level MOSFET in LFPAK56 using NextPowerS3 Technology 19 September 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP s unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFE

PSMN6R0-30YLB N-channel 30 V 6.5 m logic level MOSFET in LFPAK using NextPower technology Rev. 2 24 October 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benef

PSMN6R3-120ES N-channel 120 V 6.7 m standard level MOSFET in I2PAK 8 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic power supply equipment. 2. Features and benefits High efficiency due to low switching

PSMN6R5-25YLC N-channel 25 V 6.5 m logic level MOSFET in LFPAK using NextPower technology Rev. 2 31 October 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benef

PSMN6R0-25YLB N-channel 25 V 6.1 m logic level MOSFET in LFPAK using NextPower technology Rev. 2 31 October 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benef

PSMN6R9-100YSF NextPower 100 V, 7 m N-channel MOSFET in LFPAK56 package 8 December 2017 Product data sheet 1. General description NextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended for industrial & consumer applications. 2. Features and benefits Low Qrr for higher efficiency and lower spiking Qualified to 175 C Low QG x RDSon FOM for

PSMN6R5-30MLD N-channel 30 V, 6.5 m logic level MOSFET in LFPAK33 using NextPowerS3 Technology 21 January 2019 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in an LFPAK33 package. The NextPowerS3 portfolio, utilising Nexperia s unique SchottkyPlus technology, delivers high efficiency and the low spiking performance usually as

PSMN6R0-25YLD N-channel 25 V, 6.75 m logic level MOSFET in LFPAK56 using NextPowerS3 Technology 6 April 2016 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia s unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSF

PSMN6R7-40MLD N-channel 40 V, 6.7 m , logic level MOSFET in LFPAK33 using NextPower-S3 technology 14 August 2019 Product data sheet 1. General description 50 A, logic level N-channel enhancement mode MOSFET in 175 C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications operating at high switchin

PSMN6R7-40MSD N-channel 40 V, 6.7 m , standard level MOSFET in LFPAK33 using NextPower-S3 technology 11 November 2019 Product data sheet 1. General description 50 A, standard level N-channel enhancement mode MOSFET in 175 C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching

PSMN6R5-80PS N-channel 80 V 6.9 m standard level MOSFET in TO220 Rev. 02 1 November 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficien

PSMN6R3-120PS N-channel 120 V 6.7 m standard level MOSFET in TO-220 7 June 2013 Product data sheet 1. General description Standard level N-channel MOSFET in TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic power supply equipment. 2. Features and benefits High efficiency due to low switchi