PSMN6R4-30MLD MOSFET. Datasheet pdf. Equivalent
Type Designator: PSMN6R4-30MLD
Marking Code: 6D430L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 51 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
|Id|ⓘ - Maximum Drain Current: 66 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 13.7 nC
trⓘ - Rise Time: 16.2 nS
Cossⓘ - Output Capacitance: 587 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0063 Ohm
Package: SOT1210
PSMN6R4-30MLD Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PSMN6R4-30MLD Datasheet (PDF)
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