PSMN6R7-40MLD MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN6R7-40MLD
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 65 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 50 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 21 nS
Cossⓘ - Capacitancia de salida: 432 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0067 Ohm
Encapsulados: SOT1210
Búsqueda de reemplazo de PSMN6R7-40MLD MOSFET
- Selecciónⓘ de transistores por parámetros
PSMN6R7-40MLD datasheet
..1. Size:299K nxp
psmn6r7-40mld.pdf 
PSMN6R7-40MLD N-channel 40 V, 6.7 m , logic level MOSFET in LFPAK33 using NextPower-S3 technology 14 August 2019 Product data sheet 1. General description 50 A, logic level N-channel enhancement mode MOSFET in 175 C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications operating at high switchin
3.1. Size:307K nxp
psmn6r7-40msd.pdf
PSMN6R7-40MSD N-channel 40 V, 6.7 m , standard level MOSFET in LFPAK33 using NextPower-S3 technology 11 November 2019 Product data sheet 1. General description 50 A, standard level N-channel enhancement mode MOSFET in 175 C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching
8.1. Size:383K philips
psmn6r0-30yl.pdf
PSMN6R0-30YL N-channel 30 V 6 m logic level MOSFET in LFPAK Rev. 04 10 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefit
8.2. Size:222K philips
psmn6r5-80ps.pdf
PSMN6R5-80PS N-channel 80 V 6.9 m standard level MOSFET in TO220 Rev. 02 1 November 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficien
8.3. Size:324K nxp
psmn6r0-30yld.pdf
PSMN6R0-30YLD N-channel 30 V, 6.0 m logic level MOSFET in LFPAK56 using NextPowerS3 Technology 10 February 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP s unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFET
8.4. Size:229K nxp
psmn6r5-80bs.pdf
PSMN6R5-80BS N-channel 80V 6.9m standard level MOSFET in D2PAK Rev. 2 2 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency
8.5. Size:278K nxp
psmn6r1-30yld.pdf
PSMN6R1-30YLD N-channel 30 V, 6.1 m logic level MOSFET in LFPAK56 using NextPowerS3 Technology 19 September 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP s unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFE
8.6. Size:910K nxp
psmn6r0-30ylb.pdf
PSMN6R0-30YLB N-channel 30 V 6.5 m logic level MOSFET in LFPAK using NextPower technology Rev. 2 24 October 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benef
8.7. Size:250K nxp
psmn6r3-120es.pdf
PSMN6R3-120ES N-channel 120 V 6.7 m standard level MOSFET in I2PAK 8 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic power supply equipment. 2. Features and benefits High efficiency due to low switching
8.8. Size:898K nxp
psmn6r5-25ylc.pdf
PSMN6R5-25YLC N-channel 25 V 6.5 m logic level MOSFET in LFPAK using NextPower technology Rev. 2 31 October 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benef
8.9. Size:910K nxp
psmn6r0-25ylb.pdf
PSMN6R0-25YLB N-channel 25 V 6.1 m logic level MOSFET in LFPAK using NextPower technology Rev. 2 31 October 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benef
8.10. Size:281K nxp
psmn6r9-100ysf.pdf
PSMN6R9-100YSF NextPower 100 V, 7 m N-channel MOSFET in LFPAK56 package 8 December 2017 Product data sheet 1. General description NextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended for industrial & consumer applications. 2. Features and benefits Low Qrr for higher efficiency and lower spiking Qualified to 175 C Low QG x RDSon FOM for
8.11. Size:288K nxp
psmn6r4-30mld.pdf
PSMN6R4-30MLD N-channel 30 V, 6.4 m logic level MOSFET in LFPAK33 using NextPowerS3 Technology 21 January 2019 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in an LFPAK33 package. The NextPowerS3 portfolio, utilising Nexperia s unique SchottkyPlus technology, delivers high efficiency and the low spiking performance usually as
8.12. Size:286K nxp
psmn6r5-30mld.pdf
PSMN6R5-30MLD N-channel 30 V, 6.5 m logic level MOSFET in LFPAK33 using NextPowerS3 Technology 21 January 2019 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in an LFPAK33 package. The NextPowerS3 portfolio, utilising Nexperia s unique SchottkyPlus technology, delivers high efficiency and the low spiking performance usually as
8.13. Size:721K nxp
psmn6r0-25yld.pdf
PSMN6R0-25YLD N-channel 25 V, 6.75 m logic level MOSFET in LFPAK56 using NextPowerS3 Technology 6 April 2016 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia s unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSF
8.14. Size:818K nxp
psmn6r5-80ps.pdf
PSMN6R5-80PS N-channel 80 V 6.9 m standard level MOSFET in TO220 Rev. 02 1 November 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficien
8.15. Size:266K nxp
psmn6r3-120ps.pdf
PSMN6R3-120PS N-channel 120 V 6.7 m standard level MOSFET in TO-220 7 June 2013 Product data sheet 1. General description Standard level N-channel MOSFET in TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic power supply equipment. 2. Features and benefits High efficiency due to low switchi
Otros transistores... PSMN4R1-60YL, PSMN5R2-60YL, PSMN5R3-25MLD, PSMN5R4-25YLD, PSMN5R6-60YL, PSMN6R0-25YLD, PSMN6R4-30MLD, PSMN6R5-30MLD, 50N06, PSMN6R7-40MSD, PSMN6R9-100YSF, PSMN7R5-60YL, PSMN8R0-80YL, PSMN8R5-100ESF, PSMN8R5-100PSF, PSMN8R5-40MSD, PSMN8R7-100YSF
