PSMN6R7-40MLD. Аналоги и основные параметры

Наименование производителя: PSMN6R7-40MLD

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 65 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 50 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 21 ns

Cossⓘ - Выходная емкость: 432 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0067 Ohm

Тип корпуса: SOT1210

Аналог (замена) для PSMN6R7-40MLD

- подборⓘ MOSFET транзистора по параметрам

 

PSMN6R7-40MLD даташит

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PSMN6R7-40MSD N-channel 40 V, 6.7 m , standard level MOSFET in LFPAK33 using NextPower-S3 technology 11 November 2019 Product data sheet 1. General description 50 A, standard level N-channel enhancement mode MOSFET in 175 C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching

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PSMN6R0-30YL N-channel 30 V 6 m logic level MOSFET in LFPAK Rev. 04 10 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefit

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PSMN6R5-80PS N-channel 80 V 6.9 m standard level MOSFET in TO220 Rev. 02 1 November 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficien

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