PSMN8R7-100YSF Todos los transistores

 

PSMN8R7-100YSF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PSMN8R7-100YSF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 198 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 90 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 532 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
   Paquete / Cubierta: SOT669
 

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PSMN8R7-100YSF Datasheet (PDF)

 ..1. Size:292K  nxp
psmn8r7-100ysf.pdf pdf_icon

PSMN8R7-100YSF

PSMN8R7-100YSFNextPower 100 V, 9 m N-channel MOSFET in LFPAK56package1 November 2017 Product data sheet1. General descriptionNextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended forindustrial & consumer applications.2. Features and benefits Low Qrr for higher efficiency and lower spiking Qualified to 175 C Low QG x RDSon FOM for

 6.1. Size:216K  philips
psmn8r7-80ps.pdf pdf_icon

PSMN8R7-100YSF

PSMN8R7-80PSN-channel 80 V 8.7 m standard level MOSFET in TO-220Rev. 02 1 November 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High effici

 6.2. Size:225K  nxp
psmn8r7-80bs.pdf pdf_icon

PSMN8R7-100YSF

PSMN8R7-80BSN-channel 80 V 8.7 m standard level MOSFET in D2PAKRev. 2 2 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficienc

 8.1. Size:212K  philips
psmn8r3-40ys.pdf pdf_icon

PSMN8R7-100YSF

PSMN8R3-40YSN-channel LFPAK 40 V 8.6 m standard level MOSFETRev. 01 25 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMOS

Otros transistores... PSMN6R7-40MLD , PSMN6R7-40MSD , PSMN6R9-100YSF , PSMN7R5-60YL , PSMN8R0-80YL , PSMN8R5-100ESF , PSMN8R5-100PSF , PSMN8R5-40MSD , 10N60 , PSMNR60-25YLH , PSMNR70-30YLH , PSMNR70-40SSH , PSMNR90-40SSH , PSMNR90-40YLH , FDMS007N08LC , FDMS2D4N03S , FDMS3D5N08LC .

History: 7N80L-TQ2-T | 2SK1727 | HM2015DN03Q | AP5600N | FDD6512A | 2N7002BKV

 

 
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