Справочник MOSFET. PSMN8R7-100YSF

 

PSMN8R7-100YSF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: PSMN8R7-100YSF
   Маркировка: 8F7S10
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 198 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 90 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 38.5 nC
   trⓘ - Время нарастания: 11 ns
   Cossⓘ - Выходная емкость: 532 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.009 Ohm
   Тип корпуса: SOT669

 Аналог (замена) для PSMN8R7-100YSF

 

 

PSMN8R7-100YSF Datasheet (PDF)

 ..1. Size:292K  nxp
psmn8r7-100ysf.pdf

PSMN8R7-100YSF
PSMN8R7-100YSF

PSMN8R7-100YSFNextPower 100 V, 9 m N-channel MOSFET in LFPAK56package1 November 2017 Product data sheet1. General descriptionNextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended forindustrial & consumer applications.2. Features and benefits Low Qrr for higher efficiency and lower spiking Qualified to 175 C Low QG x RDSon FOM for

 6.1. Size:216K  philips
psmn8r7-80ps.pdf

PSMN8R7-100YSF
PSMN8R7-100YSF

PSMN8R7-80PSN-channel 80 V 8.7 m standard level MOSFET in TO-220Rev. 02 1 November 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High effici

 6.2. Size:225K  nxp
psmn8r7-80bs.pdf

PSMN8R7-100YSF
PSMN8R7-100YSF

PSMN8R7-80BSN-channel 80 V 8.7 m standard level MOSFET in D2PAKRev. 2 2 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficienc

 8.1. Size:212K  philips
psmn8r3-40ys.pdf

PSMN8R7-100YSF
PSMN8R7-100YSF

PSMN8R3-40YSN-channel LFPAK 40 V 8.6 m standard level MOSFETRev. 01 25 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMOS

 8.2. Size:241K  philips
psmn8r5-60ys.pdf

PSMN8R7-100YSF
PSMN8R7-100YSF

PSMN8R5-60YSN-channel LFPAK 60 V, 8 m standard level MOSFETRev. 01 22 December 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchM

 8.3. Size:216K  philips
psmn8r2-80ys.pdf

PSMN8R7-100YSF
PSMN8R7-100YSF

PSMN8R2-80YSN-channel LFPAK 80 V 8.5 m standard level MOSFETRev. 01 25 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMOS

 8.4. Size:219K  philips
psmn8r0-40ps.pdf

PSMN8R7-100YSF
PSMN8R7-100YSF

PSMN8R0-40PSN-channel 40 V 7.6 m standard level MOSFETRev. 02 25 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to lo

 8.5. Size:250K  nxp
psmn8r5-100esf.pdf

PSMN8R7-100YSF
PSMN8R7-100YSF

PSMN8R5-100ESFNextPower 100 V, 8.8 m N-channel MOSFET in I2PAKpackage10 April 2017 Product data sheet1. General descriptionNextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended forindustrial & consumer applications.2. Features and benefits Optimised for fast switching, low spiking, high efficiency Low QG x RDSon FOM for high efficiency

 8.6. Size:228K  nxp
psmn8r5-100xs.pdf

PSMN8R7-100YSF
PSMN8R7-100YSF

PSMN8R5-100XSN-channel 100V 8.5 m standard level MOSFET in TO220F(SOT186A)29 November 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220F (SOT186A) package qualified to175C. This product is designed and qualified for use in a wide range of industrial,communications and domestic equipment.1.2 Features and benefits Hi

 8.7. Size:231K  nxp
psmn8r5-108es.pdf

PSMN8R7-100YSF
PSMN8R7-100YSF

PSMN8R5-108ESN-channel 108 V 8.5 m standard level MOSFET in I2PAK13 January 2014 Product data sheet1. General descriptionStandard level N-channel MOSFET in a I2PAK package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits High efficiency due to low switching and co

 8.8. Size:719K  nxp
psmn8r3-40ys.pdf

PSMN8R7-100YSF
PSMN8R7-100YSF

PSMN8R3-40YSN-channel LFPAK 40 V 8.6 m standard level MOSFETRev. 01 25 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMOS

 8.9. Size:737K  nxp
psmn8r5-60ys.pdf

PSMN8R7-100YSF
PSMN8R7-100YSF

PSMN8R5-60YSN-channel LFPAK 60 V, 8 m standard level MOSFET22 July 2015 Product data sheet1. General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits Advanced TrenchMOS provides low RDSon and low gate cha

 8.10. Size:220K  nxp
psmn8r5-100es.pdf

PSMN8R7-100YSF
PSMN8R7-100YSF

PSMN8R5-100ESN-channel 100 V 8.5 m standard level MOSFET in I2PAK11 October 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a I2PAK package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.1.2 Features and benefits High efficiency due t

 8.11. Size:258K  nxp
psmn8r5-100psf.pdf

PSMN8R7-100YSF
PSMN8R7-100YSF

PSMN8R5-100PSFNextPower 100 V, 8.7 m N-channel MOSFET in TO220package10 April 2017 Product data sheet1. General descriptionNextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended forindustrial & consumer applications.2. Features and benefits Optimised for fast switching, low spiking, high efficiency Low QG x RDSon FOM for high efficiency

 8.12. Size:731K  nxp
psmn8r0-80yl.pdf

PSMN8R7-100YSF
PSMN8R7-100YSF

PSMN8R0-80YLN-channel 80 V, 8 m logic level MOSFET in LFPAK5620 October 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product is designed and qualified for use in a wide range of powersupply & motor control equipment.2. Features and benefits Advanced TrenchMOS provides low RDSon an

 8.13. Size:723K  nxp
psmn8r2-80ys.pdf

PSMN8R7-100YSF
PSMN8R7-100YSF

PSMN8R2-80YSN-channel LFPAK 80 V 8.5 m standard level MOSFETRev. 01 25 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMOS

 8.14. Size:250K  nxp
psmn8r5-100ps.pdf

PSMN8R7-100YSF
PSMN8R7-100YSF

PSMN8R5-100PSN-channel 100 V 8.5 m standard level MOSFET in TO22017 October 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in a TO220 package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits High efficiency due to low switching and co

 8.15. Size:301K  nxp
psmn8r5-40msd.pdf

PSMN8R7-100YSF
PSMN8R7-100YSF

PSMN8R5-40MSDN-channel 40 V, 8.5 m, standard level MOSFET in LFPAK33using NextPower-S3 technology10 February 2020 Product data sheet1. General description60 A, standard level N-channel enhancement mode MOSFET in 175 C LFPAK33 package usingadvanced TrenchMOS Superjunction technology. This product has been designed and qualified forhigh efficiency applications at high switching

 8.16. Size:227K  nxp
psmn8r0-40bs.pdf

PSMN8R7-100YSF
PSMN8R7-100YSF

PSMN8R0-40BSN-channel 40 V 7.6 m standard level MOSFET in D2PAKRev. 2 2 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficienc

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