PSMNR70-30YLH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMNR70-30YLH
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 268 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 300 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 51 nS
Cossⓘ - Capacitancia de salida: 2836 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00082 Ohm
Paquete / Cubierta: SOT669
Búsqueda de reemplazo de PSMNR70-30YLH MOSFET
PSMNR70-30YLH Datasheet (PDF)
psmnr70-30ylh.pdf

PSMNR70-30YLHN-channel 30 V, 0.82 m, 300 A logic level MOSFET inLFPAK56 using NextPowerS3 technology12 November 2019 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package optimizedfor low RDSon. Low IDSS leakage even when hot, high efficiency and high current rated to 300 A,optimized for DC load switch and hot-swap ap
psmnr70-40ssh.pdf

PSMNR70-40SSHN-channel 40 V, 0.7 m, 425 Amps continuous, standard levelMOSFET in LFPAK88 using NextPowerS3 Technology19 June 2019 Product data sheet1. General description425 Amp continuous current, standard level gate drive, N-channel enhancement mode MOSFETin LFPAK88 package. NextPowerS3 family using Nexperias unique SchottkyPlus technologydelivers high efficiency and
psmnr90-40ylh.pdf

PSMNR90-40YLHN-channel 40 V, 0.94 m, 300 A logic level MOSFET inLFPAK56E using NextPower-S3 Schottky-Plus technology26 April 2019 Product data sheet1. General description300 Amp, logic level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56Epackage using advanced TrenchMOS Superjunction technology. This product has been designedand qualified for high performance po
psmnr60-25ylh.pdf

PSMNR60-25YLHN-channel 25 V, 0.7 m, 300 A logic level MOSFET inLFPAK56 using NextPowerS3 technology30 September 2019 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package optimizedfor low RDSon. Low IDSS leakage even when hot, high efficiency and high current. Rated to 300 A,optimized for DC load switch and hot-swap a
Otros transistores... PSMN6R9-100YSF , PSMN7R5-60YL , PSMN8R0-80YL , PSMN8R5-100ESF , PSMN8R5-100PSF , PSMN8R5-40MSD , PSMN8R7-100YSF , PSMNR60-25YLH , AON6414A , PSMNR70-40SSH , PSMNR90-40SSH , PSMNR90-40YLH , FDMS007N08LC , FDMS2D4N03S , FDMS3D5N08LC , FDMS4D0N12C , FDMS4D5N08LC .
History: NCE65NF099LL | 2N5462 | FDS4435-NL | H7P1006MD90TZ | SVS65R240FJDD4 | CES2303 | 2SJ315
History: NCE65NF099LL | 2N5462 | FDS4435-NL | H7P1006MD90TZ | SVS65R240FJDD4 | CES2303 | 2SJ315



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JBE084M | JBE083NS | JBE083M | JMH70R430AK | JMH70R430AF | JMH65R980APLN | JMH65R980AKQ | JMH65R980AK | JMH65R980AF | JMH65R980ACFP | JMH65R640AK | JMH65R600MK | JMH65R600MF | JMPL1025AK | JMPL1025AE | JMPL0648PKQ
Popular searches
2n1308 transistor | p609 | bc327-40 | tip125 | a992 transistor | 2sa913 | 2sc711 datasheet | bu4508dx