PSMNR70-30YLH. Аналоги и основные параметры
Наименование производителя: PSMNR70-30YLH
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 268 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 300 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 51 ns
Cossⓘ - Выходная емкость: 2836 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.00082 Ohm
Тип корпуса: SOT669
Аналог (замена) для PSMNR70-30YLH
- подборⓘ MOSFET транзистора по параметрам
PSMNR70-30YLH даташит
psmnr70-30ylh.pdf
PSMNR70-30YLH N-channel 30 V, 0.82 m , 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology 12 November 2019 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package optimized for low RDSon. Low IDSS leakage even when hot, high efficiency and high current rated to 300 A, optimized for DC load switch and hot-swap ap
psmnr70-40ssh.pdf
PSMNR70-40SSH N-channel 40 V, 0.7 m , 425 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology 19 June 2019 Product data sheet 1. General description 425 Amp continuous current, standard level gate drive, N-channel enhancement mode MOSFET in LFPAK88 package. NextPowerS3 family using Nexperia s unique SchottkyPlus technology delivers high efficiency and
psmnr90-40ylh.pdf
PSMNR90-40YLH N-channel 40 V, 0.94 m , 300 A logic level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology 26 April 2019 Product data sheet 1. General description 300 Amp, logic level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56E package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance po
psmnr60-25ylh.pdf
PSMNR60-25YLH N-channel 25 V, 0.7 m , 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology 30 September 2019 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package optimized for low RDSon. Low IDSS leakage even when hot, high efficiency and high current. Rated to 300 A, optimized for DC load switch and hot-swap a
Другие IGBT... PSMN6R9-100YSF, PSMN7R5-60YL, PSMN8R0-80YL, PSMN8R5-100ESF, PSMN8R5-100PSF, PSMN8R5-40MSD, PSMN8R7-100YSF, PSMNR60-25YLH, IRFB4227, PSMNR70-40SSH, PSMNR90-40SSH, PSMNR90-40YLH, FDMS007N08LC, FDMS2D4N03S, FDMS3D5N08LC, FDMS4D0N12C, FDMS4D5N08LC
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