PSMNR70-30YLH MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: PSMNR70-30YLH
Маркировка: H7030L
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 268 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.2 V
Максимально допустимый постоянный ток стока |Id|: 300 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 95 nC
Время нарастания (tr): 51 ns
Выходная емкость (Cd): 2836 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.00082 Ohm
Тип корпуса: SOT669
Аналог (замена) для PSMNR70-30YLH
PSMNR70-30YLH Datasheet (PDF)
psmnr70-30ylh.pdf
PSMNR70-30YLHN-channel 30 V, 0.82 m, 300 A logic level MOSFET inLFPAK56 using NextPowerS3 technology12 November 2019 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package optimizedfor low RDSon. Low IDSS leakage even when hot, high efficiency and high current rated to 300 A,optimized for DC load switch and hot-swap ap
psmnr70-40ssh.pdf
PSMNR70-40SSHN-channel 40 V, 0.7 m, 425 Amps continuous, standard levelMOSFET in LFPAK88 using NextPowerS3 Technology19 June 2019 Product data sheet1. General description425 Amp continuous current, standard level gate drive, N-channel enhancement mode MOSFETin LFPAK88 package. NextPowerS3 family using Nexperias unique SchottkyPlus technologydelivers high efficiency and
psmnr90-40ylh.pdf
PSMNR90-40YLHN-channel 40 V, 0.94 m, 300 A logic level MOSFET inLFPAK56E using NextPower-S3 Schottky-Plus technology26 April 2019 Product data sheet1. General description300 Amp, logic level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56Epackage using advanced TrenchMOS Superjunction technology. This product has been designedand qualified for high performance po
psmnr60-25ylh.pdf
PSMNR60-25YLHN-channel 25 V, 0.7 m, 300 A logic level MOSFET inLFPAK56 using NextPowerS3 technology30 September 2019 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package optimizedfor low RDSon. Low IDSS leakage even when hot, high efficiency and high current. Rated to 300 A,optimized for DC load switch and hot-swap a
psmnr90-30bl.pdf
PSMNR90-30BLN-channel 30 V 1.0 m logic level MOSFET in D2PAKRev. 2 29 February 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency
psmnr90-40ssh.pdf
PSMNR90-40SSHN-channel 40 V, 0.9 m, 375 Amps continuous, standard levelMOSFET in LFPAK88 using NextPowerS3 Technology19 June 2019 Product data sheet1. General description375 Amp continuous current, standard level gate drive, N-channel enhancement mode MOSFETin LFPAK88 package. NextPowerS3 family using Nexperias unique SchottkyPlus technologydelivers high efficiency and
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