FDN5632N-F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDN5632N-F085
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 1.7 nS
   Cossⓘ - Capacitancia de salida: 60 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.082 Ohm
   Paquete / Cubierta: SSOT-3

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FDN5632N-F085 Datasheet (PDF)

..1. Size:599K onsemi
fdn5632n-f085.pdf

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6.1. Size:260K fairchild semi
fdn5632n f085.pdf

September 2008FDN5632N_F085tmN-Channel Logic Level PowerTrench MOSFET60V, 1.6A, 98m Features Applications RDS(on) = 98m at VGS = 4.5V, ID = 1.6A DC/DC converter RDS(on) = 82m at VGS = 10V, ID = 1.7A Motor Drives Typ Qg(TOT) = 9.2nC at VGS = 10V Low Miller Charge Qualified to AEC Q101 RoHS Compliant2008 Fairchild Semiconductor Corporation 1 www.fairchild

8.1. Size:91K fairchild semi
fdn5630.pdf

March 2000FDN563060V N-Channel PowerTrench MOSFETGeneral DescriptionFeaturesThis N-Channel MOSFET has been designed specifically 1.7 A, 60 V. RDS(ON) = 0.100 @ VGS = 10 Vto improve the overall efficiency of DC/DC converters usingRDS(ON) = 0.120 @ VGS = 6 V.either synchronous or conventional switching PWM Optimized for use in high frequenc

8.2. Size:944K kexin
fdn5630-3.pdf

SMD Type MOSFETN-Channel MOSFETFDN5630 (KDN5630)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13 Features VDS (V) = 60V ID = 1.7 A (VGS = 10V)1 2 RDS(ON) 100m (VGS = 10V) +0.02+0.10.15 -0.020.95 -0.1+0.11.9-0.2 RDS(ON) 120m (VGS = 6V)1. GateD2. Source3. DrainG S Absolute Maximum Ratings Ta = 25Parameter Symbol Ra

8.3. Size:1125K kexin
fdn5630.pdf

SMD Type MOSFETN-Channel MOSFETFDN5630 (KDN5630)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) = 60V ID = 1.7 A (VGS = 10V)1 2 RDS(ON) 100m (VGS = 10V)+0.1+0.050.95-0.1 0.1-0.01 RDS(ON) 120m (VGS = 6V)+0.11.9-0.1D1. Gate2. Source3. DrainG S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating

8.4. Size:1473K cn vbsemi
fdn5630.pdf

FDN5630www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available TrenchFET Power MOSFET0.085 at VGS = 10 V 4.060 2.1 nC 100 % Rg Tested0.096 at VGS = 4.5 V 3.8 100 % UIS TestedAPPLICATIONS Battery Switch DC/DC ConverterDTO-236(SOT23)G 1

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