FDN5632N-F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDN5632N-F085
Código: 5632
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.1 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 1.7 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
Carga de la puerta (Qg): 9.2 nC
Tiempo de subida (tr): 1.7 nS
Conductancia de drenaje-sustrato (Cd): 60 pF
Resistencia entre drenaje y fuente RDS(on): 0.082 Ohm
Paquete / Cubierta: SSOT-3
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FDN5632N-F085 Datasheet (PDF)
fdn5632n-f085.pdf
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fdn5632n f085.pdf
September 2008FDN5632N_F085tmN-Channel Logic Level PowerTrench MOSFET60V, 1.6A, 98m Features Applications RDS(on) = 98m at VGS = 4.5V, ID = 1.6A DC/DC converter RDS(on) = 82m at VGS = 10V, ID = 1.7A Motor Drives Typ Qg(TOT) = 9.2nC at VGS = 10V Low Miller Charge Qualified to AEC Q101 RoHS Compliant2008 Fairchild Semiconductor Corporation 1 www.fairchild
fdn5630.pdf
March 2000FDN563060V N-Channel PowerTrench MOSFETGeneral DescriptionFeaturesThis N-Channel MOSFET has been designed specifically 1.7 A, 60 V. RDS(ON) = 0.100 @ VGS = 10 Vto improve the overall efficiency of DC/DC converters usingRDS(ON) = 0.120 @ VGS = 6 V.either synchronous or conventional switching PWM Optimized for use in high frequenc
fdn5630-3.pdf
SMD Type MOSFETN-Channel MOSFETFDN5630 (KDN5630)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13 Features VDS (V) = 60V ID = 1.7 A (VGS = 10V)1 2 RDS(ON) 100m (VGS = 10V) +0.02+0.10.15 -0.020.95 -0.1+0.11.9-0.2 RDS(ON) 120m (VGS = 6V)1. GateD2. Source3. DrainG S Absolute Maximum Ratings Ta = 25Parameter Symbol Ra
fdn5630.pdf
SMD Type MOSFETN-Channel MOSFETFDN5630 (KDN5630)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) = 60V ID = 1.7 A (VGS = 10V)1 2 RDS(ON) 100m (VGS = 10V)+0.1+0.050.95-0.1 0.1-0.01 RDS(ON) 120m (VGS = 6V)+0.11.9-0.1D1. Gate2. Source3. DrainG S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating
fdn5630.pdf
FDN5630www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available TrenchFET Power MOSFET0.085 at VGS = 10 V 4.060 2.1 nC 100 % Rg Tested0.096 at VGS = 4.5 V 3.8 100 % UIS TestedAPPLICATIONS Battery Switch DC/DC ConverterDTO-236(SOT23)G 1
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
