All MOSFET. FDN5632N-F085 Datasheet

 

FDN5632N-F085 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDN5632N-F085
   Marking Code: 5632
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 1.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9.2 nC
   trⓘ - Rise Time: 1.7 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.082 Ohm
   Package: SSOT-3

 FDN5632N-F085 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDN5632N-F085 Datasheet (PDF)

 ..1. Size:599K  onsemi
 fdn5632n-f085.pdf

FDN5632N-F085 FDN5632N-F085

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 6.1. Size:260K  fairchild semi
 fdn5632n f085.pdf

FDN5632N-F085 FDN5632N-F085

September 2008FDN5632N_F085tmN-Channel Logic Level PowerTrench MOSFET60V, 1.6A, 98m Features Applications RDS(on) = 98m at VGS = 4.5V, ID = 1.6A DC/DC converter RDS(on) = 82m at VGS = 10V, ID = 1.7A Motor Drives Typ Qg(TOT) = 9.2nC at VGS = 10V Low Miller Charge Qualified to AEC Q101 RoHS Compliant2008 Fairchild Semiconductor Corporation 1 www.fairchild

 8.1. Size:91K  fairchild semi
 fdn5630.pdf

FDN5632N-F085 FDN5632N-F085

March 2000FDN563060V N-Channel PowerTrench MOSFETGeneral DescriptionFeaturesThis N-Channel MOSFET has been designed specifically 1.7 A, 60 V. RDS(ON) = 0.100 @ VGS = 10 Vto improve the overall efficiency of DC/DC converters usingRDS(ON) = 0.120 @ VGS = 6 V.either synchronous or conventional switching PWM Optimized for use in high frequenc

 8.2. Size:944K  kexin
 fdn5630-3.pdf

FDN5632N-F085 FDN5632N-F085

SMD Type MOSFETN-Channel MOSFETFDN5630 (KDN5630)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13 Features VDS (V) = 60V ID = 1.7 A (VGS = 10V)1 2 RDS(ON) 100m (VGS = 10V) +0.02+0.10.15 -0.020.95 -0.1+0.11.9-0.2 RDS(ON) 120m (VGS = 6V)1. GateD2. Source3. DrainG S Absolute Maximum Ratings Ta = 25Parameter Symbol Ra

 8.3. Size:1125K  kexin
 fdn5630.pdf

FDN5632N-F085 FDN5632N-F085

SMD Type MOSFETN-Channel MOSFETFDN5630 (KDN5630)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) = 60V ID = 1.7 A (VGS = 10V)1 2 RDS(ON) 100m (VGS = 10V)+0.1+0.050.95-0.1 0.1-0.01 RDS(ON) 120m (VGS = 6V)+0.11.9-0.1D1. Gate2. Source3. DrainG S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating

 8.4. Size:1473K  cn vbsemi
 fdn5630.pdf

FDN5632N-F085 FDN5632N-F085

FDN5630www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available TrenchFET Power MOSFET0.085 at VGS = 10 V 4.060 2.1 nC 100 % Rg Tested0.096 at VGS = 4.5 V 3.8 100 % UIS TestedAPPLICATIONS Battery Switch DC/DC ConverterDTO-236(SOT23)G 1

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: HGS210N12SL

 

 
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