FDP030N06B_F102 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDP030N06B_F102
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 205 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 195 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 33 nS
   Cossⓘ - Capacitancia de salida: 1685 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0031 Ohm
   Paquete / Cubierta: TO-220

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FDP030N06B_F102 Datasheet (PDF)

0.1. Size:641K fairchild semi
fdp030n06b f102.pdf

November 2013FDP030N06B_F102N-Channel PowerTrench MOSFET60 V, 195 A, 3.1 mFeatures Description RDS(on) = 2.67 m (Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been tai- Low FOM RDS(on) * QGlored to minimize the on-state resistance while maintainingsuperior switching perfor

0.2. Size:748K onsemi
fdp030n06b f102.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

5.1. Size:482K fairchild semi
fdp030n06.pdf

June 2009FDP030N06 N-Channel PowerTrench MOSFET60V, 193A, 3.2mFeatures Description RDS(on) = 2.6m ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been espe- Fast Switching Speedcially tailored to minimize the on-state resistance and yetmaintain superior switching performance.

5.2. Size:911K onsemi
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5.3. Size:257K inchange semiconductor
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isc N-Channel MOSFET Transistor FDP030N06FEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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