Справочник MOSFET. FDP030N06B_F102

 

FDP030N06B_F102 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDP030N06B_F102
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 205 W
   Предельно допустимое напряжение сток-исток |Uds|: 60 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 195 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 76 nC
   Время нарастания (tr): 33 ns
   Выходная емкость (Cd): 1685 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0031 Ohm
   Тип корпуса: TO-220

 Аналог (замена) для FDP030N06B_F102

 

 

FDP030N06B_F102 Datasheet (PDF)

 0.1. Size:641K  fairchild semi
fdp030n06b f102.pdf

FDP030N06B_F102 FDP030N06B_F102

November 2013FDP030N06B_F102N-Channel PowerTrench MOSFET60 V, 195 A, 3.1 mFeatures Description RDS(on) = 2.67 m (Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been tai- Low FOM RDS(on) * QGlored to minimize the on-state resistance while maintainingsuperior switching perfor

 0.2. Size:748K  onsemi
fdp030n06b f102.pdf

FDP030N06B_F102 FDP030N06B_F102

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 5.1. Size:482K  fairchild semi
fdp030n06.pdf

FDP030N06B_F102 FDP030N06B_F102

June 2009FDP030N06 N-Channel PowerTrench MOSFET60V, 193A, 3.2mFeatures Description RDS(on) = 2.6m ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been espe- Fast Switching Speedcially tailored to minimize the on-state resistance and yetmaintain superior switching performance.

 5.2. Size:911K  onsemi
fdp030n06.pdf

FDP030N06B_F102 FDP030N06B_F102

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 5.3. Size:257K  inchange semiconductor
fdp030n06.pdf

FDP030N06B_F102 FDP030N06B_F102

isc N-Channel MOSFET Transistor FDP030N06FEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

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