FDS6898AZ-F085 Todos los transistores

 

FDS6898AZ-F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDS6898AZ-F085
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 9.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.5 V
   Qgⓘ - Carga de la puerta: 16 nC
   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 440 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm
   Paquete / Cubierta: SO-8

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FDS6898AZ-F085 Datasheet (PDF)

 ..1. Size:346K  onsemi
fds6898az-f085.pdf

FDS6898AZ-F085
FDS6898AZ-F085

FDS6898AZ-F085Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFETGeneral DescriptionFeaturesThese N-Channel Logic Level MOSFETs are produced 9.4 A, 20 V RDS(ON) = 14 m @ VGS = 4.5 Vusing ON Semiconductors advanced RDS(ON) = 18 m @ VGS = 2.5 VPowerTrench process that has been especially tailored Low gate charge (16 nC typical)to minimize the on-s

 5.1. Size:326K  fairchild semi
fds6898az f085.pdf

FDS6898AZ-F085
FDS6898AZ-F085

February 2010tmFDS6898AZ_F085Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFETGeneral Description FeaturesThese N-Channel Logic Level MOSFETs are produced 9.4 A, 20 V RDS(ON) = 14 m @ VGS = 4.5 Vusing Fairchild Semiconductors advancedRDS(ON) = 18 m @ VGS = 2.5 VPowerTrench process that has been especially tailored Low gate charge (16 nC typica

 5.2. Size:77K  fairchild semi
fds6898az.pdf

FDS6898AZ-F085
FDS6898AZ-F085

October 2001FDS6898AZDual N-Channel Logic Level PWM Optimized PowerTrench MOSFETGeneral Description FeaturesThese N-Channel Logic Level MOSFETs are produced 9.4 A, 20 V RDS(ON) = 14 m @ VGS = 4.5 Vusing Fairchild Semiconductors advancedRDS(ON) = 18 m @ VGS = 2.5 VPowerTrench process that has been especially tailored Low gate charge (16 nC typical)to min

 5.3. Size:191K  onsemi
fds6898az.pdf

FDS6898AZ-F085
FDS6898AZ-F085

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: NX2301P | CPH3461

 

 
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History: NX2301P | CPH3461

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