Справочник MOSFET. FDS6898AZ-F085

 

FDS6898AZ-F085 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDS6898AZ-F085
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.6 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 9.4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 16 nC
   trⓘ - Время нарастания: 15 ns
   Cossⓘ - Выходная емкость: 440 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.014 Ohm
   Тип корпуса: SO-8

 Аналог (замена) для FDS6898AZ-F085

 

 

FDS6898AZ-F085 Datasheet (PDF)

 ..1. Size:346K  onsemi
fds6898az-f085.pdf

FDS6898AZ-F085
FDS6898AZ-F085

FDS6898AZ-F085Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFETGeneral DescriptionFeaturesThese N-Channel Logic Level MOSFETs are produced 9.4 A, 20 V RDS(ON) = 14 m @ VGS = 4.5 Vusing ON Semiconductors advanced RDS(ON) = 18 m @ VGS = 2.5 VPowerTrench process that has been especially tailored Low gate charge (16 nC typical)to minimize the on-s

 5.1. Size:326K  fairchild semi
fds6898az f085.pdf

FDS6898AZ-F085
FDS6898AZ-F085

February 2010tmFDS6898AZ_F085Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFETGeneral Description FeaturesThese N-Channel Logic Level MOSFETs are produced 9.4 A, 20 V RDS(ON) = 14 m @ VGS = 4.5 Vusing Fairchild Semiconductors advancedRDS(ON) = 18 m @ VGS = 2.5 VPowerTrench process that has been especially tailored Low gate charge (16 nC typica

 5.2. Size:77K  fairchild semi
fds6898az.pdf

FDS6898AZ-F085
FDS6898AZ-F085

October 2001FDS6898AZDual N-Channel Logic Level PWM Optimized PowerTrench MOSFETGeneral Description FeaturesThese N-Channel Logic Level MOSFETs are produced 9.4 A, 20 V RDS(ON) = 14 m @ VGS = 4.5 Vusing Fairchild Semiconductors advancedRDS(ON) = 18 m @ VGS = 2.5 VPowerTrench process that has been especially tailored Low gate charge (16 nC typical)to min

 5.3. Size:191K  onsemi
fds6898az.pdf

FDS6898AZ-F085
FDS6898AZ-F085

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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