FDS8449-F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDS8449-F085
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 7.6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 100 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.029 Ohm
Paquete / Cubierta: SO-8
Búsqueda de reemplazo de FDS8449-F085 MOSFET
FDS8449-F085 Datasheet (PDF)
fds8449-f085.pdf

FDS8449-F085N-Channel PowerTrench MOSFET40V, 7.6A, 29m Features Typ RDS(on) = 21m at VGS = 10V, ID = 7.6A Typ RDS(on) = 26m at VGS = 4.5V, ID = 6.8A Typ Qg(5) = 7.7nC at VGS = 5V, ID = 7.6A RoHS Compliant Qualified to AEC Q101Applications Inverter Power SuppliesMOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol Parameter Rat
fds8449.pdf

December 2005 FDS8449 40V N-Channel PowerTrench MOSFET General Description Features These N-Channel MOSFETs are produced using 7.6 A, 40V RDS(on) = 29m @ VGS = 10V Fairchild Semiconductors advanced PowerTrenchprocess that has been especially tailored to minimize RDS(on) = 36m @ VGS = 4.5V on-state resistance and yet maintain superior switching performance.
fds8449 f085.pdf

July 2009FDS8449_F085 40V N-Channel PowerTrench MOSFET General Description Features These N-Channel MOSFETs are produced using 7.6 A, 40V RDS(on) = 29m @ VGS = 10V Fairchild Semiconductors advanced PowerTrenchprocess that has been especially tailored to minimize RDS(on) = 36m @ VGS = 4.5V on-state resistance and yet maintain superior switching performance.
fds8449.pdf

FDS8449 40V N-Channel PowerTrench MOSFET Features General Description 7.6 A, 40V RDS(on) = 29m @ VGS = 10VThese N-Channel MOSFETs are produced using ONRDS(on) = 36m @ VGS = 4.5V Semiconductors advanced PowerTrench process that has been especially tailored to minimize High power handling capability in a widely usedon-state resistance and yet maintain superior
Otros transistores... FDN304P2 , FDN5632N-F085 , FDP030N06B_F102 , FDP2710-F085 , FDPC3D5N025X9D , FDPC8014AS , FDPF7N50U_G , FDS6898AZ-F085 , 4N60 , FDS86267P , FDS8949-F085 , FDS8958A-F085 , FDS8984-F085 , FDU3N50NZTU , FDU5N50NZTU , FDU5N60NZTU , FDWS86068-F085 .
History: 2SK526 | AOD2904 | SL20N10
History: 2SK526 | AOD2904 | SL20N10



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