FDS8949-F085 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDS8949-F085

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.6 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 105 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.029 Ohm

Encapsulados: SO-8

 Búsqueda de reemplazo de FDS8949-F085 MOSFET

- Selecciónⓘ de transistores por parámetros

 

FDS8949-F085 datasheet

 ..1. Size:454K  onsemi
 fds8949-f085.pdf pdf_icon

FDS8949-F085

FDS8949-F085 Dual N-Channel Logic Level PowerTrench MOSFET 40V, 6A, 29m Features General Description These N-Channel Logic Level MOSFETs are produced Max rDS(on) = 29m at VGS = 10V using ON Semiconductor s advanced Max rDS(on) = 36m at VGS = 4.5V PowerTrench process that has been especially tailored Low gate charge to minimize the on-state resistance and yet mainta

 7.1. Size:539K  fairchild semi
 fds8949 f085.pdf pdf_icon

FDS8949-F085

February 2010 FDS8949_F085 tm Dual N-Channel Logic Level PowerTrench MOSFET 40V, 6A, 29m Features General Description These N-Channel Logic Level MOSFETs are produced Max rDS(on) = 29m at VGS = 10V using Fairchild Semiconductor s advanced Max rDS(on) = 36m at VGS = 4.5V PowerTrench process that has been especially tailored Low gate charge to minimize the on-state

 7.2. Size:345K  fairchild semi
 fds8949.pdf pdf_icon

FDS8949-F085

October 2006 FDS8949 tm Dual N-Channel Logic Level PowerTrench MOSFET 40V, 6A, 29m Features General Description These N-Channel Logic Level MOSFETs are produced Max rDS(on) = 29m at VGS = 10V using Fairchild Semiconductor s advanced Max rDS(on) = 36m at VGS = 4.5V PowerTrench process that has been especially tailored Low gate charge to minimize the on-state resist

 7.3. Size:345K  onsemi
 fds8949.pdf pdf_icon

FDS8949-F085

October 2006 FDS8949 tm Dual N-Channel Logic Level PowerTrench MOSFET 40V, 6A, 29m Features General Description These N-Channel Logic Level MOSFETs are produced Max rDS(on) = 29m at VGS = 10V using Fairchild Semiconductor s advanced Max rDS(on) = 36m at VGS = 4.5V PowerTrench process that has been especially tailored Low gate charge to minimize the on-state resist

MOSTRAR MÁS

Otros transistores... FDP030N06B_F102, FDP2710-F085, FDPC3D5N025X9D, FDPC8014AS, FDPF7N50U_G, FDS6898AZ-F085, FDS8449-F085, FDS86267P, IRF1010E, FDS8958A-F085, FDS8984-F085, FDU3N50NZTU, FDU5N50NZTU, FDU5N60NZTU, FDWS86068-F085, FDWS86368-F085, FDWS86369-F085