FDS8949-F085 Specs and Replacement

Type Designator: FDS8949-F085

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm

Package: SO-8

FDS8949-F085 substitution

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FDS8949-F085 datasheet

 ..1. Size:454K  onsemi
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FDS8949-F085

FDS8949-F085 Dual N-Channel Logic Level PowerTrench MOSFET 40V, 6A, 29m Features General Description These N-Channel Logic Level MOSFETs are produced Max rDS(on) = 29m at VGS = 10V using ON Semiconductor s advanced Max rDS(on) = 36m at VGS = 4.5V PowerTrench process that has been especially tailored Low gate charge to minimize the on-state resistance and yet mainta... See More ⇒

 7.1. Size:539K  fairchild semi
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FDS8949-F085

February 2010 FDS8949_F085 tm Dual N-Channel Logic Level PowerTrench MOSFET 40V, 6A, 29m Features General Description These N-Channel Logic Level MOSFETs are produced Max rDS(on) = 29m at VGS = 10V using Fairchild Semiconductor s advanced Max rDS(on) = 36m at VGS = 4.5V PowerTrench process that has been especially tailored Low gate charge to minimize the on-state ... See More ⇒

 7.2. Size:345K  fairchild semi
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FDS8949-F085

October 2006 FDS8949 tm Dual N-Channel Logic Level PowerTrench MOSFET 40V, 6A, 29m Features General Description These N-Channel Logic Level MOSFETs are produced Max rDS(on) = 29m at VGS = 10V using Fairchild Semiconductor s advanced Max rDS(on) = 36m at VGS = 4.5V PowerTrench process that has been especially tailored Low gate charge to minimize the on-state resist... See More ⇒

 7.3. Size:345K  onsemi
 fds8949.pdf pdf_icon

FDS8949-F085

October 2006 FDS8949 tm Dual N-Channel Logic Level PowerTrench MOSFET 40V, 6A, 29m Features General Description These N-Channel Logic Level MOSFETs are produced Max rDS(on) = 29m at VGS = 10V using Fairchild Semiconductor s advanced Max rDS(on) = 36m at VGS = 4.5V PowerTrench process that has been especially tailored Low gate charge to minimize the on-state resist... See More ⇒

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Detailed specifications: FDP030N06B_F102, FDP2710-F085, FDPC3D5N025X9D, FDPC8014AS, FDPF7N50U_G, FDS6898AZ-F085, FDS8449-F085, FDS86267P, IRF1010E, FDS8958A-F085, FDS8984-F085, FDU3N50NZTU, FDU5N50NZTU, FDU5N60NZTU, FDWS86068-F085, FDWS86368-F085, FDWS86369-F085

Keywords - FDS8949-F085 MOSFET specs

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