FDWS9520L-F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDWS9520L-F085
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 60.8 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 940 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0125 Ohm
   Paquete / Cubierta: PQFN8-5X6

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FDWS9520L-F085 Datasheet (PDF)

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www.onsemi.comFDWS9509L-F085 (Note1)P-Channel Logic Level Power Trench MOSFET- 40 V, - 65 A, 8.0 m Features Typical RDS(on) = 6.3 m at VGS = -10V, ID = -65 A Typical Qg(tot) = 48 nC at VGS = -10V, ID = -65 A UIS Capability RoHS Compliant Qualified to AEC Q101 Wettable flanks for automatic optical inspection (AOI)Applications Automotive Engi

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FDWS9510L-F085P-Channel Logic LevelPOWERTRENCH) MOSFET-40 V, -50 A, 13.5 mWFeatures Typ RDS(on) = 11 mW at VGS = -10 V; ID = -50 Awww.onsemi.com Typ Qg(tot) = 28 nC at VGS = -10 V; ID = -50 A UIS Capability Wettable Flanks for Automatic Optical Inspection (AOI)V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified-40 V 13.5 mW @ -10 V -50 A These Devices are

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