FDWS9520L-F085 Datasheet. Specs and Replacement

Type Designator: FDWS9520L-F085

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 60.8 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 940 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0125 Ohm

Package: PQFN8-5X6

FDWS9520L-F085 substitution

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FDWS9520L-F085 datasheet

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FDWS9520L-F085

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FDWS9520L-F085

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FDWS9520L-F085

www.onsemi.com FDWS9509L-F085 (Note1) P-Channel Logic Level Power Trench MOSFET - 40 V, - 65 A, 8.0 m Features Typical RDS(on) = 6.3 m at VGS = -10V, ID = -65 A Typical Qg(tot) = 48 nC at VGS = -10V, ID = -65 A UIS Capability RoHS Compliant Qualified to AEC Q101 Wettable flanks for automatic optical inspection (AOI) Applications Automotive Engi... See More ⇒

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Detailed specifications: FDU5N60NZTU, FDWS86068-F085, FDWS86368-F085, FDWS86369-F085, FDWS86380-F085, FDWS9508L-F085, FDWS9509L-F085, FDWS9510L-F085, IRFP250, FQA10N80C-F109, FQA11N90-F109, FQA13N50C-F109, FQA13N80-F109, FQA6N90C-F109, FQA7N80C-F109, FQA8N90C-F109, FQA90N15-F109

Keywords - FDWS9520L-F085 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.