FQA10N80C-F109 Todos los transistores

 

FQA10N80C-F109 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQA10N80C-F109
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 240 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 130 nS
   Cossⓘ - Capacitancia de salida: 180 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.1 Ohm
   Paquete / Cubierta: TO-3PN
 

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FQA10N80C-F109 Datasheet (PDF)

 ..1. Size:1463K  onsemi
 fqa10n80c-f109.pdf pdf_icon

FQA10N80C-F109

FQA10N80C-F109N-Channel QFET MOSFET800 V, 10 A, 1.1 Features Description 10 A, 800 V, RDS(on) = 1.1 (Max.) @ VGS = 10 V, ID = 5 A This N-Channel enhancement mode power MOSFET is pro-duced using ON Semiconductors proprietary planar stripe and Low Gate Charge (Typ. 44 nC)DMOS technology. This advanced MOSFET technology has Low Crss (Typ. 15 pF)been especiall

 5.1. Size:800K  fairchild semi
 fqa10n80c.pdf pdf_icon

FQA10N80C-F109

September 2006 QFETFQA10N80C800V N-Channel MOSFETFeatures Description 10A, 800V, RDS(on) = 1.1 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 44 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especially tailored to

 5.2. Size:806K  fairchild semi
 fqa10n80c f109.pdf pdf_icon

FQA10N80C-F109

August 2007 QFETFQA10N80C_F109800V N-Channel MOSFETFeatures Description 10A, 800V, RDS(on) = 1.1 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 44 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especially tailored to

 6.1. Size:675K  fairchild semi
 fqa10n80.pdf pdf_icon

FQA10N80C-F109

September 2000TMQFETFQA10N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.8A, 800V, RDS(on) = 1.05 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 55 nC)planar stripe, DMOS technology. Low Crss ( typical 24 pF)This advanced technology has been especially tail

MOSTRAR MÁS

Otros transistores... FDWS86068-F085 , FDWS86368-F085 , FDWS86369-F085 , FDWS86380-F085 , FDWS9508L-F085 , FDWS9509L-F085 , FDWS9510L-F085 , FDWS9520L-F085 , P0903BDG , FQA11N90-F109 , FQA13N50C-F109 , FQA13N80-F109 , FQA6N90C-F109 , FQA7N80C-F109 , FQA8N90C-F109 , FQA90N15-F109 , FQA9N90_F109 .

History: STT3922N | BUK445-60H | SFW1800N650C2 | NCE1220SP | R6015ANZ | IRFP4321 | IRF9130SMD

 

 
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