FQA10N80C-F109 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQA10N80C-F109

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 240 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 130 nS

Cossⓘ - Capacitancia de salida: 180 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.1 Ohm

Encapsulados: TO-3PN

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FQA10N80C-F109 datasheet

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 fqa10n80c-f109.pdf pdf_icon

FQA10N80C-F109

FQA10N80C-F109 N-Channel QFET MOSFET 800 V, 10 A, 1.1 Features Description 10 A, 800 V, RDS(on) = 1.1 (Max.) @ VGS = 10 V, ID = 5 A This N-Channel enhancement mode power MOSFET is pro- duced using ON Semiconductor s proprietary planar stripe and Low Gate Charge (Typ. 44 nC) DMOS technology. This advanced MOSFET technology has Low Crss (Typ. 15 pF) been especiall

 5.1. Size:800K  fairchild semi
 fqa10n80c.pdf pdf_icon

FQA10N80C-F109

September 2006 QFET FQA10N80C 800V N-Channel MOSFET Features Description 10A, 800V, RDS(on) = 1.1 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 44 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 15pF) This advanced technology has been especially tailored to

 5.2. Size:806K  fairchild semi
 fqa10n80c f109.pdf pdf_icon

FQA10N80C-F109

August 2007 QFET FQA10N80C_F109 800V N-Channel MOSFET Features Description 10A, 800V, RDS(on) = 1.1 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 44 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 15pF) This advanced technology has been especially tailored to

 6.1. Size:675K  fairchild semi
 fqa10n80.pdf pdf_icon

FQA10N80C-F109

September 2000 TM QFET FQA10N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.8A, 800V, RDS(on) = 1.05 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 55 nC) planar stripe, DMOS technology. Low Crss ( typical 24 pF) This advanced technology has been especially tail

MOSTRAR MÁS

Otros transistores... FDWS86068-F085, FDWS86368-F085, FDWS86369-F085, FDWS86380-F085, FDWS9508L-F085, FDWS9509L-F085, FDWS9510L-F085, FDWS9520L-F085, IRF1407, FQA11N90-F109, FQA13N50C-F109, FQA13N80-F109, FQA6N90C-F109, FQA7N80C-F109, FQA8N90C-F109, FQA90N15-F109, FQA9N90_F109