Справочник MOSFET. FQA10N80C-F109

 

FQA10N80C-F109 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FQA10N80C-F109
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 240 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 10 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 130 ns
   Cossⓘ - Выходная емкость: 180 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.1 Ohm
   Тип корпуса: TO-3PN
 

 Аналог (замена) для FQA10N80C-F109

   - подбор ⓘ MOSFET транзистора по параметрам

 

FQA10N80C-F109 Datasheet (PDF)

 ..1. Size:1463K  onsemi
 fqa10n80c-f109.pdf pdf_icon

FQA10N80C-F109

FQA10N80C-F109N-Channel QFET MOSFET800 V, 10 A, 1.1 Features Description 10 A, 800 V, RDS(on) = 1.1 (Max.) @ VGS = 10 V, ID = 5 A This N-Channel enhancement mode power MOSFET is pro-duced using ON Semiconductors proprietary planar stripe and Low Gate Charge (Typ. 44 nC)DMOS technology. This advanced MOSFET technology has Low Crss (Typ. 15 pF)been especiall

 5.1. Size:800K  fairchild semi
 fqa10n80c.pdf pdf_icon

FQA10N80C-F109

September 2006 QFETFQA10N80C800V N-Channel MOSFETFeatures Description 10A, 800V, RDS(on) = 1.1 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 44 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especially tailored to

 5.2. Size:806K  fairchild semi
 fqa10n80c f109.pdf pdf_icon

FQA10N80C-F109

August 2007 QFETFQA10N80C_F109800V N-Channel MOSFETFeatures Description 10A, 800V, RDS(on) = 1.1 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 44 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especially tailored to

 6.1. Size:675K  fairchild semi
 fqa10n80.pdf pdf_icon

FQA10N80C-F109

September 2000TMQFETFQA10N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.8A, 800V, RDS(on) = 1.05 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 55 nC)planar stripe, DMOS technology. Low Crss ( typical 24 pF)This advanced technology has been especially tail

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History: SQP120N10-3M8 | IPS60R1K0PFD7S

 

 
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