FQD3N60CTM-WS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQD3N60CTM-WS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 50 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 2.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 30 nS
Cossⓘ - Capacitancia de salida: 45 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3.4 Ohm
Paquete / Cubierta: DPAK
FQD3N60CTM-WS Datasheet (PDF)
fqd3n60ctm-ws.pdf

FQD3N60CTM-WSN-Channel QFET MOSFET Description600 V, 2.4 A, 3.4 This N-Channel enhancement mode power MOSFET is produced using ON Semiconductors proprietary planar Featuresstripe and DMOS technology. This advanced MOSFET 2.4 A, 600 V, RDS(on) = 3.4 (Max.) @ VGS = 10 V, ID = 1.2 Atechnology has been especially tailored to reduce on-state resistance, and to pro
fqd3n60ctm ws.pdf

November 2013FQD3N60CTM_WSN-Channel QFET MOSFET600 V, 2.4 A, 3.4 Features Description 2.4 A, 600 V, RDS(on) = 3.4 (Max.) @ VGS = 10 V, ID = 1.2 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductors proprietary Low Gate Charge (Typ. 10.5 nC)planar stripe and DMOS technology. This advanced Low Crss (Typ. 5 pF)MOSFET te
fqd3n60 fqu3n60.pdf

April 2000TMQFETQFETQFETQFETFQD3N60 / FQU3N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.4A, 600V, RDS(on) = 3.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 5.5 pF)This advanced technology h
fqd3n60tm fqu3n60 fqu3n60tu.pdf

April 2000TMQFETQFETQFETQFETFQD3N60 / FQU3N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.4A, 600V, RDS(on) = 3.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 5.5 pF)This advanced technology h
Otros transistores... FQA7N80C-F109 , FQA8N90C-F109 , FQA90N15-F109 , FQA9N90_F109 , FQA9N90C_F109 , FQB5N60CTM_WS , FQB7P20TM_F085 , FQB8N90C , IRF830 , FQD4P25TM-WS , FQD8P10TM-F085 , FQT1N80TF-WS , HUF76629D3ST-F085 , HUFA76429D3ST-F085 , NCV8403B , NID9N05BCL , NTB004N10G .
History: FCP11N60 | NCEP026N10F
History: FCP11N60 | NCEP026N10F



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JMSL0611PP | JMSL0611PGD | JMSL0611PG | JMSL0610AGDQ | JMSL0610AGD | JMSL060SPGQ | JMSL0609PPD | JMSL0609AUQ | JMSL0609AU | JMSL0609APD | JMSL0609AP | JMSL0609AKQ | JMSL0609AK | JMSL0609AGWQ | JMSL0609AGQ | JMSL0609AG
Popular searches
nte102a | tip31cg | s9015 transistor | irf540z | ss8550 transistor | irfp240 mosfet | tip141 | 2n404