FQD3N60CTM-WS MOSFET. Datasheet pdf. Equivalent
Type Designator: FQD3N60CTM-WS
Marking Code: FQD3N60CS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 2.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 10.5 nC
trⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 45 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.4 Ohm
Package: DPAK
FQD3N60CTM-WS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQD3N60CTM-WS Datasheet (PDF)
fqd3n60ctm-ws.pdf
FQD3N60CTM-WSN-Channel QFET MOSFET Description600 V, 2.4 A, 3.4 This N-Channel enhancement mode power MOSFET is produced using ON Semiconductors proprietary planar Featuresstripe and DMOS technology. This advanced MOSFET 2.4 A, 600 V, RDS(on) = 3.4 (Max.) @ VGS = 10 V, ID = 1.2 Atechnology has been especially tailored to reduce on-state resistance, and to pro
fqd3n60ctm ws.pdf
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