FQD3N60CTM-WS Specs and Replacement

Type Designator: FQD3N60CTM-WS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.4 Ohm

Package: DPAK

FQD3N60CTM-WS substitution

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FQD3N60CTM-WS datasheet

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 fqd3n60ctm-ws.pdf pdf_icon

FQD3N60CTM-WS

FQD3N60CTM-WS N-Channel QFET MOSFET Description 600 V, 2.4 A, 3.4 This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor s proprietary planar Features stripe and DMOS technology. This advanced MOSFET 2.4 A, 600 V, RDS(on) = 3.4 (Max.) @ VGS = 10 V, ID = 1.2 A technology has been especially tailored to reduce on-state resistance, and to pro... See More ⇒

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 fqd3n60ctm ws.pdf pdf_icon

FQD3N60CTM-WS

November 2013 FQD3N60CTM_WS N-Channel QFET MOSFET 600 V, 2.4 A, 3.4 Features Description 2.4 A, 600 V, RDS(on) = 3.4 (Max.) @ VGS = 10 V, ID = 1.2 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor s proprietary Low Gate Charge (Typ. 10.5 nC) planar stripe and DMOS technology. This advanced Low Crss (Typ. 5 pF) MOSFET te... See More ⇒

 7.1. Size:575K  fairchild semi
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FQD3N60CTM-WS

April 2000 TM QFET QFET QFET QFET FQD3N60 / FQU3N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.4A, 600V, RDS(on) = 3.6 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology h... See More ⇒

 7.2. Size:573K  fairchild semi
 fqd3n60tm fqu3n60 fqu3n60tu.pdf pdf_icon

FQD3N60CTM-WS

April 2000 TM QFET QFET QFET QFET FQD3N60 / FQU3N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.4A, 600V, RDS(on) = 3.6 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology h... See More ⇒

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Detailed specifications: FQA7N80C-F109, FQA8N90C-F109, FQA90N15-F109, FQA9N90_F109, FQA9N90C_F109, FQB5N60CTM_WS, FQB7P20TM_F085, FQB8N90C, 2N60, FQD4P25TM-WS, FQD8P10TM-F085, FQT1N80TF-WS, HUF76629D3ST-F085, HUFA76429D3ST-F085, NCV8403B, NID9N05BCL, NTB004N10G

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