FQD8P10TM-F085 Todos los transistores

 

FQD8P10TM-F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQD8P10TM-F085
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 44 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 6.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 12 nC
   trⓘ - Tiempo de subida: 110 nS
   Cossⓘ - Capacitancia de salida: 120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.53 Ohm
   Paquete / Cubierta: DPAK
 

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FQD8P10TM-F085 Datasheet (PDF)

 ..1. Size:673K  onsemi
 fqd8p10tm-f085.pdf pdf_icon

FQD8P10TM-F085

FQD8P10TM-F085Features100V P-Channel MOSFET -6.6A, -100V, RDS(on) = 0.53 @VGS = -10 V Low gate charge ( typical 12 nC)General Description Low Crss ( typical 30 pF)These P-Channel enhancement mode power field effect Fast switchingtransistors are produced using ON Semiconductors 100% avalanche testedproprietary, planar stripe, DMOS technology. Imp

 5.1. Size:640K  fairchild semi
 fqd8p10tm f085.pdf pdf_icon

FQD8P10TM-F085

December 2010FQD8P10TM_F085100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -6.6A, -100V, RDS(on) = 0.53 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been especially tailor

 5.2. Size:705K  fairchild semi
 fqd8p10tf fqd8p10tm fqd8p10 fqu8p10 fqu8p10tu.pdf pdf_icon

FQD8P10TM-F085

TMQFETFQD8P10 / FQU8P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -6.6A, -100V, RDS(on) = 0.53 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been especially tailored

Otros transistores... FQA90N15-F109 , FQA9N90_F109 , FQA9N90C_F109 , FQB5N60CTM_WS , FQB7P20TM_F085 , FQB8N90C , FQD3N60CTM-WS , FQD4P25TM-WS , AO3401 , FQT1N80TF-WS , HUF76629D3ST-F085 , HUFA76429D3ST-F085 , NCV8403B , NID9N05BCL , NTB004N10G , NTB095N65S3HF , NTB110N65S3HF .

History: STB85NF3LLT4 | AOB9N70 | NTPF082N65S3F | NP100P06PLG | SSF90R240S2

 

 
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