All MOSFET. FQD8P10TM-F085 Datasheet

 

FQD8P10TM-F085 Datasheet and Replacement


   Type Designator: FQD8P10TM-F085
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 44 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 110 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.53 Ohm
   Package: DPAK
 

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FQD8P10TM-F085 Datasheet (PDF)

 ..1. Size:673K  onsemi
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FQD8P10TM-F085

FQD8P10TM-F085Features100V P-Channel MOSFET -6.6A, -100V, RDS(on) = 0.53 @VGS = -10 V Low gate charge ( typical 12 nC)General Description Low Crss ( typical 30 pF)These P-Channel enhancement mode power field effect Fast switchingtransistors are produced using ON Semiconductors 100% avalanche testedproprietary, planar stripe, DMOS technology. Imp

 5.1. Size:640K  fairchild semi
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FQD8P10TM-F085

December 2010FQD8P10TM_F085100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -6.6A, -100V, RDS(on) = 0.53 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been especially tailor

 5.2. Size:705K  fairchild semi
fqd8p10tf fqd8p10tm fqd8p10 fqu8p10 fqu8p10tu.pdf pdf_icon

FQD8P10TM-F085

TMQFETFQD8P10 / FQU8P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -6.6A, -100V, RDS(on) = 0.53 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been especially tailored

Datasheet: FQA90N15-F109 , FQA9N90_F109 , FQA9N90C_F109 , FQB5N60CTM_WS , FQB7P20TM_F085 , FQB8N90C , FQD3N60CTM-WS , FQD4P25TM-WS , AO3401 , FQT1N80TF-WS , HUF76629D3ST-F085 , HUFA76429D3ST-F085 , NCV8403B , NID9N05BCL , NTB004N10G , NTB095N65S3HF , NTB110N65S3HF .

History: SI9933ADY | IRF6217 | SSF2418EBK | RU20P3C | BLV4N60 | TPA120R800A

Keywords - FQD8P10TM-F085 MOSFET datasheet

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