FQT1N80TF-WS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQT1N80TF-WS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 0.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 25 nS

Cossⓘ - Capacitancia de salida: 20 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 20 Ohm

Encapsulados: SOT-223

 Búsqueda de reemplazo de FQT1N80TF-WS MOSFET

- Selecciónⓘ de transistores por parámetros

 

FQT1N80TF-WS datasheet

 ..1. Size:1060K  onsemi
 fqt1n80tf-ws.pdf pdf_icon

FQT1N80TF-WS

ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 5.1. Size:807K  fairchild semi
 fqt1n80tf ws.pdf pdf_icon

FQT1N80TF-WS

November 2007 QFET FQT1N80 N-Channel MOSFET 800V, 0.2A, 20 Features Description RDS(on) = 15.5 (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 5.5nC) stripe, DMOS technology. Low Crss ( Typ. 2.7pF) This advanced technology has been especiall

 7.1. Size:807K  fairchild semi
 fqt1n80.pdf pdf_icon

FQT1N80TF-WS

November 2007 QFET FQT1N80 N-Channel MOSFET 800V, 0.2A, 20 Features Description RDS(on) = 15.5 (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 5.5nC) stripe, DMOS technology. Low Crss ( Typ. 2.7pF) This advanced technology has been especiall

 9.1. Size:816K  fairchild semi
 fqt1n60c fqt1n60ctf ws.pdf pdf_icon

FQT1N80TF-WS

November 2007 QFET FQT1N60C N-Channel MOSFET 600V, 0.2A, 11.5 Features Description RDS(on) = 9.3 (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 4.8nC) stripe, DMOS technology. Low Crss ( Typ. 3.5pF) This advanced technology has been especia

MOSTRAR MÁS

Otros transistores... FQA9N90_F109, FQA9N90C_F109, FQB5N60CTM_WS, FQB7P20TM_F085, FQB8N90C, FQD3N60CTM-WS, FQD4P25TM-WS, FQD8P10TM-F085, 75N75, HUF76629D3ST-F085, HUFA76429D3ST-F085, NCV8403B, NID9N05BCL, NTB004N10G, NTB095N65S3HF, NTB110N65S3HF, NTB150N65S3HF