FQT1N80TF-WS. Аналоги и основные параметры

Наименование производителя: FQT1N80TF-WS

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 2.1 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 800 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.2 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 25 ns

Cossⓘ - Выходная емкость: 20 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 20 Ohm

Тип корпуса: SOT-223

Аналог (замена) для FQT1N80TF-WS

- подборⓘ MOSFET транзистора по параметрам

 

FQT1N80TF-WS даташит

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FQT1N80TF-WS

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 5.1. Size:807K  fairchild semi
 fqt1n80tf ws.pdf pdf_icon

FQT1N80TF-WS

November 2007 QFET FQT1N80 N-Channel MOSFET 800V, 0.2A, 20 Features Description RDS(on) = 15.5 (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 5.5nC) stripe, DMOS technology. Low Crss ( Typ. 2.7pF) This advanced technology has been especiall

 7.1. Size:807K  fairchild semi
 fqt1n80.pdf pdf_icon

FQT1N80TF-WS

November 2007 QFET FQT1N80 N-Channel MOSFET 800V, 0.2A, 20 Features Description RDS(on) = 15.5 (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 5.5nC) stripe, DMOS technology. Low Crss ( Typ. 2.7pF) This advanced technology has been especiall

 9.1. Size:816K  fairchild semi
 fqt1n60c fqt1n60ctf ws.pdf pdf_icon

FQT1N80TF-WS

November 2007 QFET FQT1N60C N-Channel MOSFET 600V, 0.2A, 11.5 Features Description RDS(on) = 9.3 (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 4.8nC) stripe, DMOS technology. Low Crss ( Typ. 3.5pF) This advanced technology has been especia

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