NID9N05BCL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NID9N05BCL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 20 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 52 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 15 V

|Id|ⓘ - Corriente continua de drenaje: 9 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 500 nS

Cossⓘ - Capacitancia de salida: 60 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.181 Ohm

Encapsulados: DPAK

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NID9N05BCL datasheet

 ..1. Size:82K  onsemi
 nid9n05acl nid9n05bcl.pdf pdf_icon

NID9N05BCL

NID9N05ACL, NID9N05BCL Power MOSFET 9.0 A, 52 V, N-Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package www.onsemi.com Benefits VDSS ID MAX High Energy Capability for Inductive Loads (Clamped) RDS(ON) TYP (Limited) Low Switching Noise Generation 52 V 90 mW 9.0 A Features Drain Diode Clamp Between Gate and Source (Pins 2, 4) ESD Protection - HB

 7.1. Size:113K  onsemi
 nid9n05clt4g.pdf pdf_icon

NID9N05BCL

NID9N05CL, NID9N05ACL Power MOSFET 9.0 A, 52 V, N-Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package http //onsemi.com Benefits VDSS ID MAX High Energy Capability for Inductive Loads (Clamped) RDS(ON) TYP (Limited) Low Switching Noise Generation 52 V 90 mW 9.0 A Features Drain Diode Clamp Between Gate and Source (Pins 2, 4) ESD Protection -

 7.2. Size:150K  onsemi
 nid9n05cl.pdf pdf_icon

NID9N05BCL

NID9N05CL Power MOSFET 9.0 A, 52 V, N-Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package http //onsemi.com Benefits VDSS ID MAX High Energy Capability for Inductive Loads (Clamped) RDS(ON) TYP (Limited) Low Switching Noise Generation 52 V 90 mW 9.0 A Features Drain Diode Clamp Between Gate and Source (Pins 2, 4) ESD Protection - HBM 5000 V

 7.3. Size:113K  onsemi
 nid9n05acl nid9n05aclt4g.pdf pdf_icon

NID9N05BCL

NID9N05CL, NID9N05ACL Power MOSFET 9.0 A, 52 V, N-Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package http //onsemi.com Benefits VDSS ID MAX High Energy Capability for Inductive Loads (Clamped) RDS(ON) TYP (Limited) Low Switching Noise Generation 52 V 90 mW 9.0 A Features Drain Diode Clamp Between Gate and Source (Pins 2, 4) ESD Protection -

MOSTRAR MÁS

Otros transistores... FQB8N90C, FQD3N60CTM-WS, FQD4P25TM-WS, FQD8P10TM-F085, FQT1N80TF-WS, HUF76629D3ST-F085, HUFA76429D3ST-F085, NCV8403B, IRF1405, NTB004N10G, NTB095N65S3HF, NTB110N65S3HF, NTB150N65S3HF, NTB190N65S3HF, NTBG020N120SC1, NTBG040N120SC1, NTBG060N090SC1