NID9N05BCL Specs and Replacement

Type Designator: NID9N05BCL

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 52 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 500 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.181 Ohm

Package: DPAK

NID9N05BCL substitution

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NID9N05BCL datasheet

 ..1. Size:82K  onsemi
 nid9n05acl nid9n05bcl.pdf pdf_icon

NID9N05BCL

NID9N05ACL, NID9N05BCL Power MOSFET 9.0 A, 52 V, N-Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package www.onsemi.com Benefits VDSS ID MAX High Energy Capability for Inductive Loads (Clamped) RDS(ON) TYP (Limited) Low Switching Noise Generation 52 V 90 mW 9.0 A Features Drain Diode Clamp Between Gate and Source (Pins 2, 4) ESD Protection - HB... See More ⇒

 7.1. Size:113K  onsemi
 nid9n05clt4g.pdf pdf_icon

NID9N05BCL

NID9N05CL, NID9N05ACL Power MOSFET 9.0 A, 52 V, N-Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package http //onsemi.com Benefits VDSS ID MAX High Energy Capability for Inductive Loads (Clamped) RDS(ON) TYP (Limited) Low Switching Noise Generation 52 V 90 mW 9.0 A Features Drain Diode Clamp Between Gate and Source (Pins 2, 4) ESD Protection - ... See More ⇒

 7.2. Size:150K  onsemi
 nid9n05cl.pdf pdf_icon

NID9N05BCL

NID9N05CL Power MOSFET 9.0 A, 52 V, N-Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package http //onsemi.com Benefits VDSS ID MAX High Energy Capability for Inductive Loads (Clamped) RDS(ON) TYP (Limited) Low Switching Noise Generation 52 V 90 mW 9.0 A Features Drain Diode Clamp Between Gate and Source (Pins 2, 4) ESD Protection - HBM 5000 V ... See More ⇒

 7.3. Size:113K  onsemi
 nid9n05acl nid9n05aclt4g.pdf pdf_icon

NID9N05BCL

NID9N05CL, NID9N05ACL Power MOSFET 9.0 A, 52 V, N-Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package http //onsemi.com Benefits VDSS ID MAX High Energy Capability for Inductive Loads (Clamped) RDS(ON) TYP (Limited) Low Switching Noise Generation 52 V 90 mW 9.0 A Features Drain Diode Clamp Between Gate and Source (Pins 2, 4) ESD Protection - ... See More ⇒

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Detailed specifications: FQB8N90C, FQD3N60CTM-WS, FQD4P25TM-WS, FQD8P10TM-F085, FQT1N80TF-WS, HUF76629D3ST-F085, HUFA76429D3ST-F085, NCV8403B, IRF1405, NTB004N10G, NTB095N65S3HF, NTB110N65S3HF, NTB150N65S3HF, NTB190N65S3HF, NTBG020N120SC1, NTBG040N120SC1, NTBG060N090SC1

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