NTH4L080N120SC1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NTH4L080N120SC1
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 170 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 29 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.3 V
   Qgⓘ - Carga de la puerta: 56 nC
   trⓘ - Tiempo de subida: 4.2 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.11 Ohm
   Paquete / Cubierta: TO-247-4LD

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NTH4L080N120SC1 Datasheet (PDF)

0.1. Size:410K onsemi
nth4l080n120sc1.pdf

MOSFET Power,N-Channel, Silicon Carbide,TO-247-4L1200 V, 80 mWNTH4L080N120SC1www.onsemi.comDescriptionSilicon Carbide (SiC) MOSFET uses a completely new technologythat provide superior switching performance and higher reliabilityVDSS RDS(ON) TYP ID MAXcompared to Silicon. In addition, the low ON resistance and compactchip size ensure low capacitance and gate charge. Co

8.1. Size:363K onsemi
nth4l040n120sc1.pdf

MOSFET SiC Power, SingleN-Channel, TO247-4L1200 V, 40 mW, 58 ANTH4L040N120SC1Features Typ. RDS(on) = 40 mWwww.onsemi.com Ultra Low Gate Charge (QG(tot) = 106 nC) High Speed Switching with Low Capacitance (Coss = 137 pF)V(BR)DSS RDS(ON) MAX ID MAX 100% Avalanche Tested1200 V 56 mW @ 20 V 58 A TJ = 175C This Device is Pb-Free and is RoHS Compliant

8.2. Size:525K onsemi
nth4l027n65s3f.pdf

MOSFET Power, N-Channel,SUPERFET) III, FRFET)650 V, 75 A, 27.4 mWNTH4L027N65S3FDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gate VDSS RDS(ON) MAX ID MAXcharge performance. This advanced technology is tailored

8.3. Size:369K onsemi
nth4l020n120sc1.pdf

MOSFET SiC Power, SingleN-Channel, TO247-4L1200 V, 20 mW, 102 ANTH4L020N120SC1Features Typ. RDS(on) = 20 mW www.onsemi.com Ultra Low Gate Charge (QG(tot) = 220 nC) High Speed Switching with Low Capacitance (Coss = 258 pF)V(BR)DSS RDS(ON) MAX ID MAX 100% Avalanche Tested1200 V 28 mW @ 20 V 102 A TJ = 175C This Device is Pb-Free and is RoHS Complian

8.4. Size:965K onsemi
nth4l040n65s3f.pdf

MOSFET Power, N-Channel,SUPERFET) III, FRFET)650 V, 65 A, 40 mWNTH4L040N65S3FDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gatecharge performance. This advanced technology is tailored to minimizeVDSS RDS(ON)

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