NTH4L080N120SC1 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTH4L080N120SC1

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 170 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 1200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 29 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4.2 nS

Cossⓘ - Capacitancia de salida: 80 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.11 Ohm

Encapsulados: TO-247-4LD

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NTH4L080N120SC1 datasheet

 0.1. Size:410K  onsemi
 nth4l080n120sc1.pdf pdf_icon

NTH4L080N120SC1

MOSFET Power, N-Channel, Silicon Carbide, TO-247-4L 1200 V, 80 mW NTH4L080N120SC1 www.onsemi.com Description Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability VDSS RDS(ON) TYP ID MAX compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Co

 8.1. Size:363K  onsemi
 nth4l040n120sc1.pdf pdf_icon

NTH4L080N120SC1

MOSFET SiC Power, Single N-Channel, TO247-4L 1200 V, 40 mW, 58 A NTH4L040N120SC1 Features Typ. RDS(on) = 40 mW www.onsemi.com Ultra Low Gate Charge (QG(tot) = 106 nC) High Speed Switching with Low Capacitance (Coss = 137 pF) V(BR)DSS RDS(ON) MAX ID MAX 100% Avalanche Tested 1200 V 56 mW @ 20 V 58 A TJ = 175 C This Device is Pb-Free and is RoHS Compliant

 8.2. Size:525K  onsemi
 nth4l027n65s3f.pdf pdf_icon

NTH4L080N120SC1

MOSFET Power, N-Channel, SUPERFET) III, FRFET) 650 V, 75 A, 27.4 mW NTH4L027N65S3F Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate VDSS RDS(ON) MAX ID MAX charge performance. This advanced technology is tailored

 8.3. Size:369K  onsemi
 nth4l020n120sc1.pdf pdf_icon

NTH4L080N120SC1

MOSFET SiC Power, Single N-Channel, TO247-4L 1200 V, 20 mW, 102 A NTH4L020N120SC1 Features Typ. RDS(on) = 20 mW www.onsemi.com Ultra Low Gate Charge (QG(tot) = 220 nC) High Speed Switching with Low Capacitance (Coss = 258 pF) V(BR)DSS RDS(ON) MAX ID MAX 100% Avalanche Tested 1200 V 28 mW @ 20 V 102 A TJ = 175 C This Device is Pb-Free and is RoHS Complian

MOSTRAR MÁS

Otros transistores... NTD5C446N, NTD5C668NL, NTDV18N06L, NTH027N65S3F, NTH4L020N120SC1, NTH4L027N65S3F, NTH4L040N120SC1, NTH4L040N65S3F, IRF1404, NTH4L160N120SC1, NTHD4P02F, NTHL020N090SC1, NTHL020N120SC1, NTHL027N65S3HF, NTHL033N65S3HF, NTHL040N120SC1, NTHL040N65S3HF