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NTH4L080N120SC1 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NTH4L080N120SC1
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 170 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 1200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4.3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 29 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 56 nC
   trⓘ - Время нарастания: 4.2 ns
   Cossⓘ - Выходная емкость: 80 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.11 Ohm
   Тип корпуса: TO-247-4LD

 Аналог (замена) для NTH4L080N120SC1

 

 

NTH4L080N120SC1 Datasheet (PDF)

 0.1. Size:410K  onsemi
 nth4l080n120sc1.pdf

NTH4L080N120SC1 NTH4L080N120SC1

MOSFET Power,N-Channel, Silicon Carbide,TO-247-4L1200 V, 80 mWNTH4L080N120SC1www.onsemi.comDescriptionSilicon Carbide (SiC) MOSFET uses a completely new technologythat provide superior switching performance and higher reliabilityVDSS RDS(ON) TYP ID MAXcompared to Silicon. In addition, the low ON resistance and compactchip size ensure low capacitance and gate charge. Co

 8.1. Size:363K  onsemi
 nth4l040n120sc1.pdf

NTH4L080N120SC1 NTH4L080N120SC1

MOSFET SiC Power, SingleN-Channel, TO247-4L1200 V, 40 mW, 58 ANTH4L040N120SC1Features Typ. RDS(on) = 40 mWwww.onsemi.com Ultra Low Gate Charge (QG(tot) = 106 nC) High Speed Switching with Low Capacitance (Coss = 137 pF)V(BR)DSS RDS(ON) MAX ID MAX 100% Avalanche Tested1200 V 56 mW @ 20 V 58 A TJ = 175C This Device is Pb-Free and is RoHS Compliant

 8.2. Size:525K  onsemi
 nth4l027n65s3f.pdf

NTH4L080N120SC1 NTH4L080N120SC1

MOSFET Power, N-Channel,SUPERFET) III, FRFET)650 V, 75 A, 27.4 mWNTH4L027N65S3FDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gate VDSS RDS(ON) MAX ID MAXcharge performance. This advanced technology is tailored

 8.3. Size:369K  onsemi
 nth4l020n120sc1.pdf

NTH4L080N120SC1 NTH4L080N120SC1

MOSFET SiC Power, SingleN-Channel, TO247-4L1200 V, 20 mW, 102 ANTH4L020N120SC1Features Typ. RDS(on) = 20 mW www.onsemi.com Ultra Low Gate Charge (QG(tot) = 220 nC) High Speed Switching with Low Capacitance (Coss = 258 pF)V(BR)DSS RDS(ON) MAX ID MAX 100% Avalanche Tested1200 V 28 mW @ 20 V 102 A TJ = 175C This Device is Pb-Free and is RoHS Complian

 8.4. Size:965K  onsemi
 nth4l040n65s3f.pdf

NTH4L080N120SC1 NTH4L080N120SC1

MOSFET Power, N-Channel,SUPERFET) III, FRFET)650 V, 65 A, 40 mWNTH4L040N65S3FDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gatecharge performance. This advanced technology is tailored to minimizeVDSS RDS(ON)

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