NTLJS17D0P03P8Z Todos los transistores

 

NTLJS17D0P03P8Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NTLJS17D0P03P8Z
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 11.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 106 nS
   Cossⓘ - Capacitancia de salida: 550 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0113 Ohm
   Paquete / Cubierta: WDFN6
 

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NTLJS17D0P03P8Z Datasheet (PDF)

 0.1. Size:325K  onsemi
ntljs17d0p03p8z.pdf pdf_icon

NTLJS17D0P03P8Z

MOSFET - Power, SingleP-Channel, WDFN6-30 VProduct PreviewNTLJS17D0P03P8Zwww.onsemi.comFeatures Small Footprint (4 mm2) for Compact Design Low RDS(on) to Minimize Conduction LossesV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen-Free/BFR-Free and are RoHSCompliant 11.3 mW @ -10 V-30 V -11.7 A21.3 mW @ -4.5 VApplications Battery Management

 8.1. Size:119K  onsemi
ntljs1102p ntljs1102ptag ntljs1102ptbg.pdf pdf_icon

NTLJS17D0P03P8Z

NTLJS1102PPower MOSFET-8 V, -8.1 A, mCOOL] Single P-Channel,2x2 mm, WDFN packageFeatures WDFN Package with Exposed Drain Pad for Excellent Thermalhttp://onsemi.comConduction Lowest RDS(on) in 2 x 2 mm PackageV(BR)DSS RDS(on) MAX ID MAX 1.2 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate36 mW @ -4.5 V -6.2 ADrive 2 x 2 mm Footprint Same as SC-

 9.1. Size:84K  onsemi
ntljs4114n.pdf pdf_icon

NTLJS17D0P03P8Z

NTLJS4114NPower MOSFET30 V, 7.8 A, mCoolt Single N-Channel,2x2 mm WDFN PackageFeatures WDFN Package Provides Exposed Drain Pad for Excellent Thermalhttp://onsemi.comConduction 2x2 mm Footprint Same as SC-88V(BR)DSS RDS(on) MAX ID MAX (Note 1) Lowest RDS(on) in 2x2 mm Package35 mW @ 4.5 V 1.8 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate30 V

 9.2. Size:117K  onsemi
ntljs3180pz ntljs3180pztbg.pdf pdf_icon

NTLJS17D0P03P8Z

NTLJS3180PZPower MOSFET-20 V, -7.7 A, mCoolt Single P-Channel,ESD, 2x2 mm WDFN PackageFeatures WDFN 2x2 mm Package with Exposed Drain Pads for Excellenthttp://onsemi.comThermal Conduction Lowest RDS(on) Solution in 2x2 mm PackageV(BR)DSS RDS(on) MAX ID MAX Footprint Same as SC-88 Package38 mW @ -4.5 V Low Profile (

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