NTLJS17D0P03P8Z - Аналоги. Основные параметры
Наименование производителя: NTLJS17D0P03P8Z
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 2.4
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 11.7
A
Tj ⓘ - Максимальная температура канала: 150
°C
tr ⓘ -
Время нарастания: 106
ns
Cossⓘ - Выходная емкость: 550
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0113
Ohm
Тип корпуса:
WDFN6
Аналог (замена) для NTLJS17D0P03P8Z
-
подбор ⓘ MOSFET транзистора по параметрам
NTLJS17D0P03P8Z технические параметры
0.1. Size:325K onsemi
ntljs17d0p03p8z.pdf 

MOSFET - Power, Single P-Channel, WDFN6 -30 V Product Preview NTLJS17D0P03P8Z www.onsemi.com Features Small Footprint (4 mm2) for Compact Design Low RDS(on) to Minimize Conduction Losses V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen-Free/BFR-Free and are RoHS Compliant 11.3 mW @ -10 V -30 V -11.7 A 21.3 mW @ -4.5 V Applications Battery Management
8.1. Size:119K onsemi
ntljs1102p ntljs1102ptag ntljs1102ptbg.pdf 

NTLJS1102P Power MOSFET -8 V, -8.1 A, mCOOL] Single P-Channel, 2x2 mm, WDFN package Features WDFN Package with Exposed Drain Pad for Excellent Thermal http //onsemi.com Conduction Lowest RDS(on) in 2 x 2 mm Package V(BR)DSS RDS(on) MAX ID MAX 1.2 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate 36 mW @ -4.5 V -6.2 A Drive 2 x 2 mm Footprint Same as SC-
9.1. Size:84K onsemi
ntljs4114n.pdf 

NTLJS4114N Power MOSFET 30 V, 7.8 A, mCoolt Single N-Channel, 2x2 mm WDFN Package Features WDFN Package Provides Exposed Drain Pad for Excellent Thermal http //onsemi.com Conduction 2x2 mm Footprint Same as SC-88 V(BR)DSS RDS(on) MAX ID MAX (Note 1) Lowest RDS(on) in 2x2 mm Package 35 mW @ 4.5 V 1.8 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate 30 V
9.2. Size:117K onsemi
ntljs3180pz ntljs3180pztbg.pdf 

NTLJS3180PZ Power MOSFET -20 V, -7.7 A, mCoolt Single P-Channel, ESD, 2x2 mm WDFN Package Features WDFN 2x2 mm Package with Exposed Drain Pads for Excellent http //onsemi.com Thermal Conduction Lowest RDS(on) Solution in 2x2 mm Package V(BR)DSS RDS(on) MAX ID MAX Footprint Same as SC-88 Package 38 mW @ -4.5 V Low Profile (
9.3. Size:91K onsemi
ntljs4149 ntljs4149ptag.pdf 

NTLJS4149P Power MOSFET -30 V, -5.9 A, mCoolt Single P-Channel, 2x2 mm, WDFN Package Features WDFN Package with Exposed Drain Pad for Excellent Thermal http //onsemi.com Conduction 2x2 mm Footprint Same as SC-88 Package V(BR)DSS RDS(on) MAX Low Profile (
9.4. Size:125K onsemi
ntljs2103ptag ntljs2103ptbg.pdf 

NTLJS2103P Power MOSFET -12 V, -7.7 A, mCoolt Single P-Channel, 2x2 mm, WDFN Package Features Recommended Replacement Device - NTLUS3A40P http //onsemi.com WDFN Package Provides Exposed Drain Pad for Excellent Thermal V(BR)DSS RDS(on) TYP ID MAX (Note 1) Conduction 2x2 mm Footprint Same as SC-88 Package 25 mW @ -4.5 V -5.9 A Lowest RDS(on) Solution in 2x2 mm Package
9.5. Size:124K onsemi
ntljs3a18pz.pdf 

NTLJS3A18PZ Power MOSFET -20 V, -8.2 A, mCoolt Single P-Channel, 2.0x2.0x0.8 mm WDFN Package Features WDFN Package with Exposed Drain Pads for Excellent Thermal http //onsemi.com Conduction Low Profile WDFN (2.0x2.0x0.8 mm) for Board Space Saving V(BR)DSS RDS(on) MAX ID MAX Ultra Low RDS(on) 18 mW @ -4.5 V ESD Diode-Protected Gate 25 mW @ -2.5 V -20 V -8.2 A T
9.6. Size:115K onsemi
ntljs4114nt1g.pdf 

NTLJS4114N Power MOSFET 30 V, 7.8 A, mCoolt Single N-Channel, 2x2 mm WDFN Package Features WDFN Package Provides Exposed Drain Pad for Excellent Thermal http //onsemi.com Conduction 2x2 mm Footprint Same as SC-88 V(BR)DSS RDS(on) MAX ID MAX (Note 1) Lowest RDS(on) in 2x2 mm Package 35 mW @ 4.5 V 1.8 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate 30 V
9.7. Size:126K onsemi
ntljs3113pt1g ntljs3113ptag.pdf 

NTLJS3113P Power MOSFET -20 V, -7.7 A, mCoolt Single P-Channel, 2x2 mm, WDFN Package Features Recommended Replacement Device - NTLUS3A40P http //onsemi.com WDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction V(BR)DSS RDS(on) MAX ID MAX (Note 1) 2x2 mm Footprint Same as SC-88 Package 40 mW @ -4.5 V Lowest RDS(on) Solution in 2x2 mm Package 50 mW @
9.8. Size:129K onsemi
ntljs2103p.pdf 

NTLJS2103P Power MOSFET -12 V, -7.7 A, mCoolt Single P-Channel, 2x2 mm, WDFN Package Features Recommended Replacement Device - NTLUS3A40P http //onsemi.com WDFN Package Provides Exposed Drain Pad for Excellent Thermal V(BR)DSS RDS(on) TYP ID MAX (Note 1) Conduction 2x2 mm Footprint Same as SC-88 Package 25 mW @ -4.5 V -5.9 A Lowest RDS(on) Solution in 2x2 mm Package
9.9. Size:78K onsemi
ntljs4159n ntljs4159nt1g.pdf 

NTLJS4159N Power MOSFET 30 V, 7.8 A, mCoolt Single N-Channel, 2x2 mm WDFN Package Features WDFN Package Provides Exposed Drain Pad for Excellent Thermal http //onsemi.com Conduction 2x2 mm Footprint Same as SC-88 V(BR)DSS RDS(on) MAX ID MAX (Note 1) Lowest RDS(on) in 2x2 mm Package 35 mW @ 4.5 V 1.8 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate 30 V
9.10. Size:130K onsemi
ntljs3113p.pdf 

NTLJS3113P Power MOSFET -20 V, -7.7 A, mCoolt Single P-Channel, 2x2 mm, WDFN Package Features Recommended Replacement Device - NTLUS3A40P http //onsemi.com WDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction V(BR)DSS RDS(on) MAX ID MAX (Note 1) 2x2 mm Footprint Same as SC-88 Package 40 mW @ -4.5 V Lowest RDS(on) Solution in 2x2 mm Package 50 mW @
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