NTMFD016N06C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTMFD016N06C
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 36 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 32 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 1.7 nS
Cossⓘ - Capacitancia de salida: 319 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0163 Ohm
Paquete / Cubierta: DFN8-5X6
Búsqueda de reemplazo de NTMFD016N06C MOSFET
NTMFD016N06C Datasheet (PDF)
ntmfd016n06c.pdf

MOSFET - Power, DualN-Channel, DUAL SO8FL60 V, 16.3 mW, 32 ANTMFD016N06CFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant 60 V 16.3 mW @ 10 V 32 ATypical A
ntmfd024n06c.pdf

MOSFET - Power, DualN-Channel, DUAL SO8-FL60 V, 22.6 mW, 24 ANTMFD024N06CFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant 60 V 22.6 mW @ 10 V 24 ATypical
ntmfd020n06c.pdf

MOSFET - Power, DualN-Channel, DUAL SO8FL60 V, 20.3 mW, 27 ANTMFD020N06CFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant60 V 20.3 mW @ 10 V 27 ATypical
ntmfd030n06c.pdf

MOSFET - Power, DualN-Channel, DUAL SO8FL60 V, 29.7 mW, 19 ANTMFD030N06CFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant60 V 29.7 mW @ 10 V 19 ATypical
Otros transistores... NTHL190N65S3HF , NTHLD040N65S3HF , NTHS5404T1 , NTHS5441 , NTLJS17D0P03P8Z , NTLUD3A260PZ , NTLUS3A40PZ , NTMD6P02R2 , 5N60 , FCAB21490L1 , FCAB21520L1 , MTMC8E2A0LBF , NTMFD020N06C , NTMFD024N06C , NTMFD030N06C , NTMFD4C50N , NTMFD5875NL .
History: CTM09N20 | HAT2168H | AUIRFR5305TR | IPB60R230P6 | LNH06R140 | MRF174 | JCS5AN50V
History: CTM09N20 | HAT2168H | AUIRFR5305TR | IPB60R230P6 | LNH06R140 | MRF174 | JCS5AN50V



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