NTMFD016N06C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

NTMFD016N06C Datasheet (PDF)

..1. Size:163K onsemi
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MOSFET - Power, DualN-Channel, DUAL SO8FL60 V, 16.3 mW, 32 ANTMFD016N06CFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant 60 V 16.3 mW @ 10 V 32 ATypical A

8.1. Size:134K onsemi
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MOSFET - Power, DualN-Channel, DUAL SO8-FL60 V, 22.6 mW, 24 ANTMFD024N06CFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant 60 V 22.6 mW @ 10 V 24 ATypical

8.2. Size:223K onsemi
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MOSFET - Power, DualN-Channel, DUAL SO8FL60 V, 20.3 mW, 27 ANTMFD020N06CFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant60 V 20.3 mW @ 10 V 27 ATypical

8.3. Size:225K onsemi
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MOSFET - Power, DualN-Channel, DUAL SO8FL60 V, 29.7 mW, 19 ANTMFD030N06CFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant60 V 29.7 mW @ 10 V 19 ATypical

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