NTMFD016N06C MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTMFD016N06C
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 36 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 32 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 1.7 nS
Cossⓘ - Capacitancia de salida: 319 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0163 Ohm
Paquete / Cubierta: DFN8-5X6
Búsqueda de reemplazo de MOSFET NTMFD016N06C
Principales características: NTMFD016N06C
ntmfd016n06c.pdf
MOSFET - Power, Dual N-Channel, DUAL SO8FL 60 V, 16.3 mW, 32 A NTMFD016N06C Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 60 V 16.3 mW @ 10 V 32 A Typical A
ntmfd024n06c.pdf
MOSFET - Power, Dual N-Channel, DUAL SO8-FL 60 V, 22.6 mW, 24 A NTMFD024N06C Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 60 V 22.6 mW @ 10 V 24 A Typical
ntmfd020n06c.pdf
MOSFET - Power, Dual N-Channel, DUAL SO8FL 60 V, 20.3 mW, 27 A NTMFD020N06C Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 60 V 20.3 mW @ 10 V 27 A Typical
ntmfd030n06c.pdf
MOSFET - Power, Dual N-Channel, DUAL SO8FL 60 V, 29.7 mW, 19 A NTMFD030N06C Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 60 V 29.7 mW @ 10 V 19 A Typical
Otros transistores... NTHL190N65S3HF , NTHLD040N65S3HF , NTHS5404T1 , NTHS5441 , NTLJS17D0P03P8Z , NTLUD3A260PZ , NTLUS3A40PZ , NTMD6P02R2 , IRLB4132 , FCAB21490L1 , FCAB21520L1 , MTMC8E2A0LBF , NTMFD020N06C , NTMFD024N06C , NTMFD030N06C , NTMFD4C50N , NTMFD5875NL .
Liste
Recientemente añadidas las descripciónes de los transistores:
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