All MOSFET. NTMFD016N06C Datasheet

 

NTMFD016N06C Datasheet and Replacement


   Type Designator: NTMFD016N06C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 32 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 1.7 nS
   Cossⓘ - Output Capacitance: 319 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0163 Ohm
   Package: DFN8-5X6
 

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NTMFD016N06C Datasheet (PDF)

 ..1. Size:163K  onsemi
ntmfd016n06c.pdf pdf_icon

NTMFD016N06C

MOSFET - Power, DualN-Channel, DUAL SO8FL60 V, 16.3 mW, 32 ANTMFD016N06CFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant 60 V 16.3 mW @ 10 V 32 ATypical A

 8.1. Size:134K  onsemi
ntmfd024n06c.pdf pdf_icon

NTMFD016N06C

MOSFET - Power, DualN-Channel, DUAL SO8-FL60 V, 22.6 mW, 24 ANTMFD024N06CFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant 60 V 22.6 mW @ 10 V 24 ATypical

 8.2. Size:223K  onsemi
ntmfd020n06c.pdf pdf_icon

NTMFD016N06C

MOSFET - Power, DualN-Channel, DUAL SO8FL60 V, 20.3 mW, 27 ANTMFD020N06CFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant60 V 20.3 mW @ 10 V 27 ATypical

 8.3. Size:225K  onsemi
ntmfd030n06c.pdf pdf_icon

NTMFD016N06C

MOSFET - Power, DualN-Channel, DUAL SO8FL60 V, 29.7 mW, 19 ANTMFD030N06CFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant60 V 29.7 mW @ 10 V 19 ATypical

Datasheet: NTHL190N65S3HF , NTHLD040N65S3HF , NTHS5404T1 , NTHS5441 , NTLJS17D0P03P8Z , NTLUD3A260PZ , NTLUS3A40PZ , NTMD6P02R2 , 5N60 , FCAB21490L1 , FCAB21520L1 , MTMC8E2A0LBF , NTMFD020N06C , NTMFD024N06C , NTMFD030N06C , NTMFD4C50N , NTMFD5875NL .

History: STU95N2LH5 | UT70N03L | TK30S06K3L | VBZM18N20 | LSB60R030HT | HGD650N15SL | HGI170N10AL

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