NTMFD016N06C
MOSFET. Datasheet pdf. Equivalent
Type Designator: NTMFD016N06C
Marking Code: 16DN6C
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 36
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 32
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 6.9
nC
trⓘ - Rise Time: 1.7
nS
Cossⓘ -
Output Capacitance: 319
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0163
Ohm
Package:
DFN8-5X6
NTMFD016N06C
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTMFD016N06C
Datasheet (PDF)
..1. Size:163K onsemi
ntmfd016n06c.pdf
MOSFET - Power, DualN-Channel, DUAL SO8FL60 V, 16.3 mW, 32 ANTMFD016N06CFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant 60 V 16.3 mW @ 10 V 32 ATypical A
8.1. Size:134K onsemi
ntmfd024n06c.pdf
MOSFET - Power, DualN-Channel, DUAL SO8-FL60 V, 22.6 mW, 24 ANTMFD024N06CFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant 60 V 22.6 mW @ 10 V 24 ATypical
8.2. Size:223K onsemi
ntmfd020n06c.pdf
MOSFET - Power, DualN-Channel, DUAL SO8FL60 V, 20.3 mW, 27 ANTMFD020N06CFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant60 V 20.3 mW @ 10 V 27 ATypical
8.3. Size:225K onsemi
ntmfd030n06c.pdf
MOSFET - Power, DualN-Channel, DUAL SO8FL60 V, 29.7 mW, 19 ANTMFD030N06CFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant60 V 29.7 mW @ 10 V 19 ATypical
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