NTMFD5C470NL Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTMFD5C470NL  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 24 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 36 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 55 nS

Cossⓘ - Capacitancia de salida: 200 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0115 Ohm

Encapsulados: DFN8-5X6

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NTMFD5C470NL datasheet

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NTMFD5C470NL

NTMFD5C470NL MOSFET Power, Dual, N-Channel 40 V, 11.5 mW, 36 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 11.5 mW @ 10 V 40 V Compliant 36 A 17.8 mW @ 4.5 V

 0.1. Size:205K  1
ntmfd5c470nlt1g.pdf pdf_icon

NTMFD5C470NL

NTMFD5C470NL MOSFET Power, Dual, N-Channel 40 V, 11.5 mW, 36 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 11.5 mW @ 10 V 40 V Compliant 36 A 17.8 mW @ 4.5 V

 6.1. Size:206K  1
ntmfd5c466nlt1g.pdf pdf_icon

NTMFD5C470NL

NTMFD5C466NL MOSFET Power, Dual, N-Channel 40 V, 7.4 mW, 52 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 7.4 mW @ 10 V 40 V Compliant 52 A 12.6 mW @ 4.5 V

 6.2. Size:192K  1
ntmfd5c466nt1g.pdf pdf_icon

NTMFD5C470NL

NTMFD5C466N Power MOSFET 40 V, 8.1 mW, 49 A, Dual N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses www.onsemi.com These Devices are Pb-Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) V(BR)DSS RDS(ON) MAX ID MAX Parameter Symbol Value

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