All MOSFET. NTMFD5C470NL Datasheet

 

NTMFD5C470NL MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTMFD5C470NL
   Marking Code: 5C470L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 24 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 36 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 9 nC
   trⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
   Package: DFN8-5X6

 NTMFD5C470NL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTMFD5C470NL Datasheet (PDF)

 ..1. Size:205K  onsemi
 ntmfd5c470nl.pdf

NTMFD5C470NL NTMFD5C470NL

NTMFD5C470NLMOSFET Power, Dual,N-Channel40 V, 11.5 mW, 36 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS11.5 mW @ 10 V40 VCompliant36 A17.8 mW @ 4.5 V

 0.1. Size:205K  1
 ntmfd5c470nlt1g.pdf

NTMFD5C470NL NTMFD5C470NL

NTMFD5C470NLMOSFET Power, Dual,N-Channel40 V, 11.5 mW, 36 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS11.5 mW @ 10 V40 VCompliant36 A17.8 mW @ 4.5 V

 6.1. Size:206K  1
 ntmfd5c466nlt1g.pdf

NTMFD5C470NL NTMFD5C470NL

NTMFD5C466NLMOSFET Power, Dual,N-Channel40 V, 7.4 mW, 52 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS7.4 mW @ 10 V40 VCompliant52 A12.6 mW @ 4.5 V

 6.2. Size:192K  1
 ntmfd5c466nt1g.pdf

NTMFD5C470NL NTMFD5C470NL

NTMFD5C466NPower MOSFET40 V, 8.1 mW, 49 A, Dual N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseswww.onsemi.com These Devices are Pb-Free and are RoHS CompliantMAXIMUM RATINGS (TJ = 25C unless otherwise noted)V(BR)DSS RDS(ON) MAX ID MAXParameter Symbol Value

 6.3. Size:192K  onsemi
 ntmfd5c466n.pdf

NTMFD5C470NL NTMFD5C470NL

NTMFD5C466NPower MOSFET40 V, 8.1 mW, 49 A, Dual N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseswww.onsemi.com These Devices are Pb-Free and are RoHS CompliantMAXIMUM RATINGS (TJ = 25C unless otherwise noted)V(BR)DSS RDS(ON) MAX ID MAXParameter Symbol Value

 6.4. Size:207K  onsemi
 ntmfd5c446nl.pdf

NTMFD5C470NL NTMFD5C470NL

NTMFD5C446NLMOSFET Power, Dual,N-Channel40 V, 2.65 mW, 145 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2.65 mW @ 10 V40 VCompliant145 A3.9 mW @ 4.5

 6.5. Size:206K  onsemi
 ntmfd5c466nl.pdf

NTMFD5C470NL NTMFD5C470NL

NTMFD5C466NLMOSFET Power, Dual,N-Channel40 V, 7.4 mW, 52 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS7.4 mW @ 10 V40 VCompliant52 A12.6 mW @ 4.5 V

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top