NTMFD5C680NL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTMFD5C680NL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 19 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 26 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 25 nS

Cossⓘ - Capacitancia de salida: 150 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm

Encapsulados: DFN8-5X6

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NTMFD5C680NL datasheet

 ..1. Size:338K  onsemi
 ntmfd5c680nl.pdf pdf_icon

NTMFD5C680NL

NTMFD5C680NL MOSFET Power, Dual, N-Channel 60 V, 28 mW, 26 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 28 mW @ 10 V 60 V Compliant 26 A 41 mW @ 4.5 V MAXI

 6.1. Size:206K  1
 ntmfd5c650nlt1g.pdf pdf_icon

NTMFD5C680NL

NTMFD5C650NL MOSFET Power, Dual, N-Channel 60 V, 4.2 mW, 111 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 4.2 mW @ 10 V 60 V Compliant 111 A 5.8 mW @ 4.5 V

 6.2. Size:345K  1
 ntmfd5c674nlt1g.pdf pdf_icon

NTMFD5C680NL

NTMFD5C674NL MOSFET Dual, N-Channel 60 V, 14.4 mW, 42 A Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 14.4 mW @ 10 V 60 V 42 A MAXIMUM RATINGS (TJ = 2

 6.3. Size:206K  onsemi
 ntmfd5c650nl.pdf pdf_icon

NTMFD5C680NL

NTMFD5C650NL MOSFET Power, Dual, N-Channel 60 V, 4.2 mW, 111 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 4.2 mW @ 10 V 60 V Compliant 111 A 5.8 mW @ 4.5 V

MOSTRAR MÁS

Otros transistores... NTMFD4C50N, NTMFD5875NL, NTMFD5C446NL, NTMFD5C466N, NTMFD5C466NL, NTMFD5C470NL, NTMFD5C650NL, NTMFD5C674NL, IRF530, NTMFD6H840NL, NTMFD6H846NL, NTMFD6H852NL, NTMFS015N10MCL, NTMFS016N06C, NTMFS020N06C, NTMFS024N06C, NTMFS08N003C