NTMFS4845N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTMFS4845N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 62.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V
|Id|ⓘ - Corriente continua de drenaje: 115 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 48.4 nS
Cossⓘ - Capacitancia de salida: 650 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0029 Ohm
Encapsulados: SO-8FL
Búsqueda de reemplazo de NTMFS4845N MOSFET
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NTMFS4845N datasheet
ntmfs4845n.pdf
NTMFS4845N Power MOSFET 30 V, 115 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX Applications 2.9 mW @ 10 V Refer to Application N
ntmfs4845nt1g.pdf
NTMFS4845N Power MOSFET 30 V, 115 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 2.9 mW @ 10 V Refer to Application No
ntmfs4847nat1g ntmfs4847nt1g.pdf
NTMFS4847N Power MOSFET 30 V, 85 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 4.1 mW @ 10 V Refer to Application Not
ntmfs4849nt1g.pdf
NTMFS4849N Power MOSFET 30 V, 71 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO8 Package These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 5.1 mW @ 10 V Refer to Application Note
Otros transistores... NTMFS0D55N03CG, NTMFS0D8N02P1E, NTMFS0D9N03CG, NTMFS1D15N03CG, NTMFS23D9N06HL, NTMFS3D6N10MCL, NTMFS4833NA, NTMFS4837NH, AO3407, NTMFS4897NF, NTMFS4899NF, NTMFS4927NC, NTMFS4936NC, NTMFS4C020N, NTMFS4C022N, NTMFS4C024N, NTMFS4C025N
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