NTMFS4845N Specs and Replacement
Type Designator: NTMFS4845N
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 62.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id| ⓘ - Maximum Drain Current: 115 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 48.4 nS
Cossⓘ -
Output Capacitance: 650 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm
Package: SO-8FL
- MOSFET ⓘ Cross-Reference Search
NTMFS4845N datasheet
..1. Size:137K onsemi
ntmfs4845n.pdf 
NTMFS4845N Power MOSFET 30 V, 115 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX Applications 2.9 mW @ 10 V Refer to Application N... See More ⇒
0.1. Size:107K onsemi
ntmfs4845nt1g.pdf 
NTMFS4845N Power MOSFET 30 V, 115 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 2.9 mW @ 10 V Refer to Application No... See More ⇒
6.1. Size:106K onsemi
ntmfs4847nat1g ntmfs4847nt1g.pdf 
NTMFS4847N Power MOSFET 30 V, 85 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 4.1 mW @ 10 V Refer to Application Not... See More ⇒
6.2. Size:107K onsemi
ntmfs4849nt1g.pdf 
NTMFS4849N Power MOSFET 30 V, 71 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO8 Package These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 5.1 mW @ 10 V Refer to Application Note... See More ⇒
6.3. Size:106K onsemi
ntmfs4846nt1g.pdf 
NTMFS4846N Power MOSFET 30 V, 100 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO8 Package These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 3.4 mW @ 10 V Refer to Application Not... See More ⇒
6.4. Size:136K onsemi
ntmfs4847n.pdf 
NTMFS4847N Power MOSFET 30 V, 85 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX Applications 4.1 mW @ 10 V Refer to Application No... See More ⇒
6.5. Size:138K onsemi
ntmfs4841nh.pdf 
NTMFS4841NH Power MOSFET 30 V, 59 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Low RG These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX Applications 7.0 mW @ 10 V Refer to Application Note AND8195/D 30 V 59 A... See More ⇒
6.6. Size:145K onsemi
ntmfs4841n.pdf 
NTMFS4841N Power MOSFET 30 V, 57 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX Applications 7.0 mW @ 10 V Refer to Application Note AND8195/D 30 V 57 A 11.4 mW @ 4... See More ⇒
6.7. Size:108K onsemi
ntmfs4841nht1g.pdf 
NTMFS4841NH Power MOSFET 30 V, 59 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Low RG These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 7.0 mW @ 10 V Refer to Application Note AND8195/D 30 V 59 A ... See More ⇒
6.8. Size:115K onsemi
ntmfs4841nt1g.pdf 
NTMFS4841N Power MOSFET 30 V, 57 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 7.0 mW @ 10 V Refer to Application Note AND8195/D 30 V 57 A 11.4 mW @ 4.... See More ⇒
6.9. Size:137K onsemi
ntmfs4849n.pdf 
NTMFS4849N Power MOSFET 30 V, 71 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO8 Package These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX Applications 5.1 mW @ 10 V Refer to Application Not... See More ⇒
6.10. Size:137K onsemi
ntmfs4846n.pdf 
NTMFS4846N Power MOSFET 30 V, 100 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Thermally Enhanced SO8 Package These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX Applications 3.4 mW @ 10 V Refer to Application No... See More ⇒
Detailed specifications: NTMFS0D55N03CG, NTMFS0D8N02P1E, NTMFS0D9N03CG, NTMFS1D15N03CG, NTMFS23D9N06HL, NTMFS3D6N10MCL, NTMFS4833NA, NTMFS4837NH, AO3407, NTMFS4897NF, NTMFS4899NF, NTMFS4927NC, NTMFS4936NC, NTMFS4C020N, NTMFS4C022N, NTMFS4C024N, NTMFS4C025N
Keywords - NTMFS4845N MOSFET specs
NTMFS4845N cross reference
NTMFS4845N equivalent finder
NTMFS4845N pdf lookup
NTMFS4845N substitution
NTMFS4845N replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.