NTMFS4H013NF Todos los transistores

 

NTMFS4H013NF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NTMFS4H013NF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 104 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 269 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 55.1 nS
   Cossⓘ - Capacitancia de salida: 2537 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0009 Ohm
   Paquete / Cubierta: SO-8FL
 

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NTMFS4H013NF Datasheet (PDF)

 ..1. Size:89K  onsemi
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NTMFS4H013NF

NTMFS4H013NFPower MOSFET25 V, 269 A, Single N-Channel, SO-8FLFeatures Integrated Schottky Diode Optimized Design to Minimize Conduction and Switching Losseswww.onsemi.com Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSVGS MAX RDS(on) TYP QGTOT

 5.1. Size:84K  onsemi
 ntmfs4h01nf.pdf pdf_icon

NTMFS4H013NF

NTMFS4H01NFPower MOSFET25 V, 334 A, Single N-Channel, SO-8FLFeatures Integrated Schottky Diode Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance www.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantVGS MAX RDS(on) T

 5.2. Size:81K  onsemi
 ntmfs4h01n.pdf pdf_icon

NTMFS4H013NF

NTMFS4H01NPower MOSFET25 V, 334 A, Single N-Channel, SO-8FLFeatures Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performancehttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantVGS MAX RDS(on) TYP QGTOTApplications

 6.1. Size:86K  onsemi
 ntmfs4h02nf.pdf pdf_icon

NTMFS4H013NF

NTMFS4H02NFPower MOSFET25 V, 193 A, Single N-Channel, SO-8FLFeatures Integrated Schottky Diode Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductanceswww.onsemi.com Optimized material for improved thermal performance These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantVGS MAX RDS(on)

MOSTRAR MÁS

Otros transistores... NTMFS4C028N , NTMFS4C029N , NTMFS4C032N , NTMFS4C054N , NTMFS4C250N , NTMFS4C290N , NTMFS4C302N , NTMFS4C59N , IRF1405 , NTMFS5113PL , NTMFS5C404N , NTMFS5C406N , NTMFS5C406NL , NTMFS5C410N , NTMFS5C426N , NTMFS5C430N , NTMFS5C430NL .

History: AM3940N | IPB100N04S2-04 | SI4483ADY | MS49P63 | HY110N06T | VS3652DB | IRFS9N60APBF

 

 
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