NTMFS4H013NF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTMFS4H013NF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 104 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 269 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 55.1 nS

Cossⓘ - Capacitancia de salida: 2537 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0009 Ohm

Encapsulados: SO-8FL

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NTMFS4H013NF datasheet

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NTMFS4H013NF

NTMFS4H013NF Power MOSFET 25 V, 269 A, Single N-Channel, SO-8FL Features Integrated Schottky Diode Optimized Design to Minimize Conduction and Switching Losses www.onsemi.com Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS VGS MAX RDS(on) TYP QGTOT

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NTMFS4H013NF

NTMFS4H01NF Power MOSFET 25 V, 334 A, Single N-Channel, SO-8FL Features Integrated Schottky Diode Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance www.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant VGS MAX RDS(on) T

 5.2. Size:81K  onsemi
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NTMFS4H013NF

NTMFS4H01N Power MOSFET 25 V, 334 A, Single N-Channel, SO-8FL Features Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant VGS MAX RDS(on) TYP QGTOT Applications

 6.1. Size:86K  onsemi
 ntmfs4h02nf.pdf pdf_icon

NTMFS4H013NF

NTMFS4H02NF Power MOSFET 25 V, 193 A, Single N-Channel, SO-8FL Features Integrated Schottky Diode Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances www.onsemi.com Optimized material for improved thermal performance These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant VGS MAX RDS(on)

MOSTRAR MÁS

Otros transistores... NTMFS4C028N, NTMFS4C029N, NTMFS4C032N, NTMFS4C054N, NTMFS4C250N, NTMFS4C290N, NTMFS4C302N, NTMFS4C59N, IRF830, NTMFS5113PL, NTMFS5C404N, NTMFS5C406N, NTMFS5C406NL, NTMFS5C410N, NTMFS5C426N, NTMFS5C430N, NTMFS5C430NL